Data Sheet Shottky barrier diode RB070M-30 Applications General rectification (Common cathode dual chip) Dimensions (Unit : mm) Land size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 Features 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability PMDU Construction Silicon epitaxial planar Structure 0.9±0.1 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping specifications (Unit : mm) 4.0±0.1 1.81±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg Limits 30 30 1.5 30 150 40 to 150 8.0±0.2 3.71±0.1 0.25±0.05 1.75±0.1 φ1.55±0.05 2.0±0.05 3.5±0.05 4.0±0.1 φ1.0±0.1 1.5MAX Unit V V A A °C °C (*1)Mounted on epoxy board. 180°Half sine wave Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Symbol VF 1 VF 2 Min. Typ. Max. Unit - 0.37 0.44 0.43 0.49 V V IF=0.5A IF=1.5A IR - 9.0 50 μA VR=30V 1/3 Conditions 2011.04 - Rev.B Data Sheet RB070M-30 1000 100000 Ta=150℃ 10000 Ta=125℃ REVERSE CURRENT:IR(uA) 1 Ta=150℃ Ta=25℃ 0.1 Ta=-25℃ 0.01 1000 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 0.001 100 200 300 400 500 600 10 1 0 5 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 15 20 25 30 0 200 REVERSE CURRENT:IR(uA) 450 440 AVE:441.5mV 430 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 160 140 120 100 80 60 AVE:8.828uA 40 420 Ta=25℃ f=1MHz VR=0V n=10pcs 390 380 370 360 350 340 330 AVE:332.6pF 320 20 310 0 300 VF DISPERSION MAP IR DISPERSION MAP 150 Ct DISPERSION MAP 8.3ms 100 AVE:96.0A 50 REVERSE RECOVERY TIME:trr(ns) 20 1cyc Ifsm 100 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 15 10 AVE:9.30ns 5 50 Ifsm 8.3ms 8.3ms 1cyc 0 0 0 30 400 Ta=25℃ VR=30V n=30pcs 180 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=1.5A n=30pcs 460 5 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 470 FORWARD VOLTAGE:VF(mV) 100 0.01 0 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz Ta=125℃ PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(mA) Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 1 trr DISPERSION MAP IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Mounted on epoxy board 1000 Ifs IM=10mA Rth(j-a) 100 t 100 50 0 2 IF=0.5A 1ms time 1.5 300us 10 Rth(j-c) 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 0.001 D=1/2 1 DC Sin(θ＝180) 0.5 1 0 0.1 1 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 150 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 100 1000 0 1 2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 3 2011.04 - Rev.B Data Sheet RB070M-30 0.5 Sin(θ＝180) 0.3 D=1/2 0.2 DC 0.1 0A 0V 4 D=1/2 3 DC Io t T VR D=t/T VR=15V Tj=150℃ 2 1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.4 REVERSE POWER DISSIPATION:PR (W) 5 5 0A 0V 4 3 DC 2 D=1/2 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 t T 1 Sin(θ＝180) Sin(θ＝180) 0 Io VR D=t/T VR=15V Tj=150℃ 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 15 10 5 AVE:8.70kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A