ROHM RB060L

Data Sheet
Schottky barrier diode
RB060L-40
Applications
Rectifying small power
Dimensions (Unit : mm)
Land size figure (Unit : mm)
2.0
3
6
①
②
0.1±0.02
0.1
4.2
5.0±0.3
1.2±0.3
4.5±0.2
Features
1)Small power mold type.
(PMDS)
2) Low IR
3) High reliability
2.0
2.6±0.2
PMDS
2.0±0.2
1.5±0.2
Construction
Silicon epitaxial planar
Structure
ROHM : PMDS
JEDEC : SOD-106
①
② Manufacture Date
Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
0.3
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
φ1.55±0.05
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
Reverse voltage (DC)
VR
Average rectified forward current
Io
Forward current surge peak （60Hz・1cyc）
IFSM
Junction temperature
Tj
Storage temperature
Tstg
(*1) Mounted on epoxy board. 180Half sine wave
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
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© 2011 ROHM Co., Ltd. All rights reserved.
Limits
Unit
V
V
A
A
C
C
40
40
2
70
125
40 to 125
Conditions
Symbol
VF1
Min.
Typ.
Max.
Unit
-
-
0.50
V
IF=2.0A
VF2
-
-
0.45
V
IF=1.0A
IR
-
-
1
90
120
mA
VR=40V
θj-a
θj-a
-
1/3
C/W
Mounteing on alumina board
Mounted on epxy board
2011.04 - Rev.G
1000000
Ta=125℃
1
Ta=25℃
Ta=150℃
Ta=-25℃
0.1
100
200
300
400
500
f=1MHz
10000
Ta=125℃
1000
Ta=75℃
100
Ta=25℃
10
1
Ta=-25℃
0.1
0
600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
10
5
1
10 15 20 25 30 35 40
0
460
AVE:460.4mV
450
440
80
70
60
50
40
30
AVE:9.069uA
20
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(uA)
470
Ta=25℃
VR=40V
n=30pcs
90
10
0
430
VF DISPERSION MAP
100
AVE:157.0A
50
0
15
10
Ifsm
8.3ms 8.3ms
1cyc
100
5
AVE:9.3ns
50
0
1
1000
t
200
150
100
50
0
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
100
2
D=1/2
Mounted on epoxy board
100
Rth(j-c)
10
IM=10mA
IF=1A
1
1ms
DC
Rth(j-a)
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISRESION MAP
250
30
AVE:579.1pF
150
0
300
25
200
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
PEAK SURGE
FORWARD CURRENT:IFSM(A)
8.3ms
150
20
Ct DISPERSION MAP
20
REVERSE RECOVERY TIME:trr(ns)
1cyc
Ifsm
15
Ta=25℃
f=1MHz
VR=0V
n=10pcs
IR DISPERSION MAP
200
10
600
590
580
570
560
550
540
530
520
510
500
100
Ta=25℃
IF=2A
n=30pcs
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
480
FORWARD VOLTAGE:VF(mV)
100
0.01
0.01
0
1000
Ta=150℃
100000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=75℃
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
10
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
RB060L-40
Sin(θ＝180)
1
time
300us
0.1
0.001
0
0.01
0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
1000
0
1
2
3
4
5
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
2011.04 - Rev.G
5
8
6
D=1/2
4
Sin(θ＝180)
DC
2
5
0A
0V
4
DC
t
T
3
VR
D=t/T
VR=20V
Tj=125℃
D=1/2
2
1
Sin(θ＝180)
0
0
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
40
Io
0A
0V
Io
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIEＤ
FORWARD CURRENT:Io(A)
10
REVERSE POWER
DISSIPATION:PR (W)
Data Sheet
RB060L-40
t
4
DC
T
VR
D=t/T
VR=20V
Tj=125℃
3
D=1/2
2
1
Sin(θ＝180)
0
0
25
50
75
100
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
125
0
25
50
75
100
125
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
30
No break at 30kV
25
20
15
AVE:17.6kV
10
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.04 - Rev.G
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Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A