ROHM TT8J13

Data Sheet
1.5V Drive Pch + Pch MOSFET
TT8J13
Dimensions (Unit : mm)
 Structure
Silicon P-channel MOSFET
TSST8
Features
1) Low On-resistance.
2) Small high power package.
3) Low voltage drive(1.5V drive).
(8)
(7)
(6)
(5)
(1)
(2)
(3)
(4)
Abbreviated symbol : J13
 Application
Switching
Inner circuit
(8)
(7)
(6)
(5)
 Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
Taping
TCR
3000

TT8J13
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
12
V
Gate-source voltage
VGSS
0 to 8
V
2.5
A
5
0.8
A
A
Drain current
Source current
(Body Diode)
Continuous
ID
Pulsed
Continuous
IDP
Is
*1
Pulsed
Isp
*1
Power dissipation
Channel temperature
Range of storage temperature
PD
*2
Tch
Tstg
5
A
1.25
1
150
55 to 150
W / TOTAL
W / ELEMENT
C
C
∗2
∗2
∗1
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Thermal resistance
Parameter
Channel to Ambient
Symbol
*
Rth (ch-a)
Limits
Unit
100
125
˚C / W /TOTAL
˚C / W /ELEMENT
* Mounted on a ceramic board.
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.03 - Rev.A
Data Sheet
TT8J13
 Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
10
A
VGS=8V, VDS=0V
12
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
10
A
VDS=12V, VGS=0V
VGS (th)
0.3
-
1.0
V
VDS=6V, ID=1mA
Drain-source breakdown voltage V (BR)DSS
Zero gate voltage drain current
Gate threshold voltage
Conditions
-
44
62
ID=2.5A, VGS=4.5V
-
55
77
ID=1.2A, VGS=2.5V
-
75
110
-
90
180
l Yfs l*
3.5
-
-
S
ID=2.5A, VDS=6V
Input capacitance
Ciss
-
2000
-
pF
VDS=6V
Output capacitance
Coss
-
130
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
120
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
11
-
ns
ID=1.2A, VDD 6V
tr *
-
40
-
ns
VGS=4.5V
td(off) *
-
160
-
ns
RL=5
tf *
-
60
-
ns
RG=10
Total gate charge
Qg *
-
16
-
nC
ID=2.5A
Gate-source charge
Gate-drain charge
Qgs *
Qgd *
-
2.4
2.2
-
nC
nC
VDD 6V
VGS=4.5V
Static drain-source on-state
resistance
Forward transfer admittance
Rise time
Turn-off delay time
Fall time
RDS (on)
m
ID=1.2A, VGS=1.8V
ID=0.5A, VGS=1.5V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
Unit
-
-
1.2
V
Conditions
Is=2.5A, VGS=0V
*Pulsed
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.03 - Rev.A
Data Sheet
TT8J13
Electrical characteristic curves (Ta=25C)
Fig.1 Typical output characteristics(Ⅰ)
Fig.2 Typical output characteristics(Ⅱ)
2.5
2.5
1.5
VGS= -1.2V
1
1.5
VGS= -4.5V
VGS= -2.5V
VGS= -1.8V
VGS= -1.5V
1
0.5
0.5
VGS= -1.0V
VGS= -1.0V
0
0
0
0.2
0.4
0.6
0.8
0
1
2
4
6
8
10
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
Fig.3 Typical Transfer Characteristics
10
1000
VDS= -6V
Pulsed
Ta=25°C
pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
1
DRAIN CURRENT : -ID[A]
Ta=25°C
pulsed
VGS= -1.2V
2
DRAIN CURRENT : -ID[A]
2
DRAIN CURRENT : -ID[A]
Ta=25°C
pulsed
VGS= -4.5V
VGS= -2.5V
VGS= -1.8V
VGS= -1.5V
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.001
VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
100
10
0
0.5
1
1.5
0.1
1
10
DRAIN-CURRENT : -ID[A]
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
1000
1000
VGS= -2.5V
Pulsed
VGS= -4.5V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
10
0.1
1
10
0.1
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1
10
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
3/6
2011.03 - Rev.A
Data Sheet
TT8J13
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
1000
VGS= -1.8V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
1000
100
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
10
0.1
1
10
0.1
1
DRAIN-CURRENT : -ID[A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
10
VGS=0V
Pulsed
REVERSE DRAIN CURRENT : -Is [A]
VDS= -6V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.001
0.1
0.1
1
0
10
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : -VSD [V]
DRAIN-CURRENT : -ID[A]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.12 Switching Characteristics
1000
150
Ta=25°C
pulsed
ID= -1.25A
100
Ta=25°C
VDD= -6V
VGS=-4.5V
RG=10W
Pulsed
td(off)
SWITCHING TIME : t [ns]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
10
DRAIN-CURRENT : -ID[A]
100
FORWARD TRANSFER ADMITTANCE : |Yfs|
VGS= -1.5V
Pulsed
ID= -2.5A
50
100
tf
10
td(on)
tr
1
0
0
2
4
6
0.01
8
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
0.1
1
10
100
DRAIN-CURRENT : -ID[A]
GATE-SOURCE VOLTAGE : -VGS[V]
4/6
2011.03 - Rev.A
Data Sheet
TT8J13
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
Fig.13 Dynamic Input Characteristics
5
10000
4
CAPACITANCE : C [pF]
GATE-SOURCE VOLTAGE : -VGS [V]
Ciss
3
2
1000
100
Coss
Ta=25°C
VDD= -6V
ID= -2.5A
Pulsed
1
Crss
Ta=25°C
f=1MHz
VGS=0V
10
0
0
5
10
15
0.01
20
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V]
TOTAL GATE CHARGE : Qg [nC]
5/6
2011.03 - Rev.A
Data Sheet
TT8J13
 Measurement circuits
Pulse Width
VGS
ID
VDS
VGS
10%
50%
90%
RL
50%
10%
D.U.T.
10%
RG
VDD
VDS
90%
td(on)
tr
ton
90%
td(off)
tf
toff
Fig.1-2　Switching Waveforms
Fig.1-1 Switching Time Measurement Circuit
VG
ID
VDS
VGS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
 Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD
protection circuit.
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
6/6
2011.03 - Rev.A
Notice
Notes
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A