MOSFET CJA03N10-HF N-Channel RoHS Device Halogen Free 1 : Gate 2 : Drain 3 : Source Features SOT-89-3L -Special process technology for high ESD capability. 0.181(4.60) 0.173(4.40) 0.061(1.55) REF. -High density cell design for extremely low RDS(ON). -Good stability and uniformity with high EAS. 0.102(2.60) 0.091(2.30) -Excellent package for good heat dissipation. 1 0.020(0.52) 0.013(0.32) Circuit Diagram 0.167(4.25) 0.155(3.94) 3 2 0.023(0.58) 0.016(0.40) 0.060(1.50) TYP. D 0.118(3.00) TYP. 0.063(1.60) 0.055(1.40) G 0.047(1.20) 0.035(0.90) 0.017(0.44) 0.014(0.35) S Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25°C unless otherwise noted) Symbol Value Units Drain-source voltage VDS 100 V Gate-source voltage VGS ±20 V Continuous drain current ID 3 A Pulsed drain current (Note 1) IDM 20 A Power dissipation PD 0.5 W RΘJA 250 °C/W Junction temperature TJ 150 °C Storage temperature TSTG -55 to +150 °C Parameter Thermal resistance from Junction to ambient (Note 2) Note: 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 1 QW-JTR11 Comchip Technology CO., LTD. MOSFET Electrical Characteristics ( T =25°C unless otherwise noted) A Parameter Conditions Symbol Min 100 Typ Max Unit V V Static Characteristics Drain-Source breakdown voltage VGS=0V, ID=250μA V(BR)DSS Zero gate voltage drain current VDS=100V, VGS=0V IDSS 1 μA Gate-body leakage current VDS=0V, VGS=±20V IGSS ±100 nA Gate-threshold voltage (note 1) VDS=VGS, ID=250μA VGS(th) 2 V Drain-source on-resistance (note 1) VGS=10V, ID=5A RDS(ON) 140 mΩ Forward transconductance (note 1) VDS=5V, ID=2.9A gFS Diode forward voltage (note 1) IS=3A, VGS=0V VSD 1 3 S 1.2 V Dynamic Characteristics (note 2) Input capacitance Ciss 690 Coss 120 Crss 90 td(on) 11 tr 7.4 td(off) 35 Turn-off fall time tf 9.1 Total gate charge Qg 15.5 Qgs 3.2 Qgd 4.7 Output capacitance VDS=25V, VGS=0V, f=1MHz Reverse transfer capacitance pF Switching Characteristics (note 2) Turn-on delay time Turn-on rise time VDS=30V, VGS=10V, Turn-off delay time ID=2A, RGEN=2.5Ω, RL=15Ω Gate-source charge VDS=30V, VGS=10V, ID=3A Gate-drain charge ns nC Note: 1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% 2. Guaranteed by design, not subject to producting. Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 QW-JTR11 Comchip Technology CO., LTD. MOSFET Reel Taping Specification 12 o 0 D2 D1 D W1 SOT-89-3L SOT-89-3L SYMBOL A B C d D D1 D2 (mm) 4.85 ± 0.10 4.45 ± 0.10 1.85 ± 0.10 1.50 + 0.10 180 ± 2.00 60.00 ± 1.00 R32.00 ± 1.00 (inch) 0.191 ± 0.004 0.175± 0.004 0.073 ± 0.004 0.059 + 0.004 7.087 ± 0.079 2.362 ± 0.039 1.260 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 5.50 ± 0.10 8.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 12.00 + 0.30 /–0.10 16.50 ± 1.00 (inch) 0.069 ± 0.004 0.217 ± 0.004 0.315 ± 0.004 0.158 ± 0.004 0.079 ± 0.004 0.472 + 0.012 /–0.004 0.650 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 3 QW-JTR11 Comchip Technology CO., LTD. MOSFET Marking Code Part Number Marking Code CJA03N10-HF CJ A .03N10 CJ A 03N10 xx/xxx = Product type marking code Suggested PAD Layout A SOT-89-3L B SIZE (mm) (inch) A 2.60 0.102 B 1.40 0.055 C 4.40 0.173 D 3.20 0.126 E 1.90 0.075 F 1.40 0.055 G 0.80 0.032 H 0.90 0.035 I 1.50 0.059 C D 45° E F G H I Standard Packaging REEL PACK Case Type SOT-89-3L REEL Reel Size ( pcs ) (inch) 1,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 4 QW-JTR11 Comchip Technology CO., LTD.