MOSFET 2N7002K-HF N-Channel RoHS Device Halogen Free SOT-23 Features 0.120 (3.04) 0.110 (2.80) -Small Signal MOSFET. 3 0.055 (1.40) 0.047 (1.20) -ESD protected: 1000V. 2 1 0.080 (2.04) 0.070 (1.78) Marking: 702 Equivalent Circuit 0.044 (1.11) 0.035 (0.89) 0.007 (0.18) 0.003 (0.08) 0.104 (2.64) 0.083 (2.10) D G : Gate S : Source D : Drain G 0.020 (0.50) 0.015 (0.37) S 0.004 (0.100) 0.001 (0.013) 0.027 (0.69) 0.014 (0.35) Dimensions in inches and (millimeter) Maximum Ratings (at T =25°C unless otherwise noted) A Symbol Value Unit Drain-Source voltage VDSS 60 Vdc Drain-Gate Voltage (RGS=1.0 MΩ) VDGR 60 Vdc @Continuous TC=25°C(Note 1) ID ±115 @Continuous TC=100°C(Note 1) ID ±75 @Pulsed (Note 2) IDM ±800 @Continuous VGS ±20 Vdc VGSM ±40 Vpk Symbol Max. Value Unit PD 225 mW 1.8 mW/°C RΘJA 556 °C/W PD 300 mW 2.4 mW/°C RΘJA 417 °C/W TJ, TSTG -55 to +150 °C Rating Drain current mAdc Gate-Source voltage @Non-repetitive (tp≤50μs) Thermal Characteristics Characteristics Total Device Dissipation FR–5 Board (Note 3) @TA = 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate (Note 4) @TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Note: 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%. 3. FR-5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. Company reserves the right to improve product design , functions and reliability without notice. QW-JTR09 REV: A Page 1 MOSFET Electrical Characteristics (at T =25°C unless otherwise noted) A Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS=0V, VDS=60V) Conditions VGS=0V, ID=10μA Symbol Min. V(BR)DSS 60 Typ. Max. Unit V TJ=25°C 1.0 μA IDSS TJ=125°C 500 Gate–Body Leakage Current, Forward VGS=20V IGSSF 1 μA Gate–Body Leakage Current, Reverse VGS=-20V IGSSR -1 μA 2.5 V ON CHARACTERISTICS (Note 1) Gate Threshold Voltage VDS=VGS, ID=250μA VGS(th) 1 On-State Drain Current VDS≥2.0VDS(ON), VGS=10V ID(ON) 500 1.5 mA VGS=10V, ID=500mA Static Drain-Source On-State Voltage 3.75 VDS(ON) V VGS=5V, ID=50mA 0.375 VGS=10V, ID=500mA @TC=25°C Static Drain-Source On-State Resistance 1.4 VGS=10V, ID=500mA @TC=125°C 13.5 RDS(ON) Ω VGS=5V, ID=50mA @TC=25°C 1.8 VGS=5V, ID=50mA @TC=125°C Forward Transconductance 7.5 VDS≥2.0VDS(ON), ID=200mA 7.5 13.5 gfs 80 mS DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance VDS=25V, VGS=0V, f=1.0MHz Reverse Transfer Capacitance Ciss 17 50 Coss 10 25 Crss 2.5 5.0 pF SWITCHING CHARACTERISTICS (Note 1) Turn-On Delay Time VDD=25V, ID=500mA, td(on) 7 20 Turn-Off Delay Time RG=25Ω, RL=50Ω, VGΕΝ=10V td(off) 11 40 Diode Forward On-Voltage IS=115mA, VGS=0V VSD -1.5 V Source Current Continuous Body Diode IS -115 mA ISM -800 mA nS BODY–DRAIN DIODE RATINGS Source Current Pulsed Note: 1. Pulse Test: Pulse Width ≦300μs , Duty Cycle ≦2.0%. Company reserves the right to improve product design , functions and reliability without notice. QW-JTR09 REV: A Page 2 MOSFET RATING AND CHARACTERISTIC CURVES (2N7002K-HF) Fig.1 Ohmic Region Fig.2 Transfer Characteristics 2.0 1.0 VDS = 10V 1.6 VGS=10V 1.4 9V 1.2 ID, Drain-Source Current (A) ID, Drain-Source Current (A) 1.8 8V 1.0 7V 0.8 0.6 6V 0.4 5V 0.2 4V 3V 0 0 1 2 3 4 5 6 7 8 9 25°C 0.8 125°C 0.6 0.4 0.2 0 10 0 VDS, Drain-Source Voltage (V) 3 2 4 5 6 7 8 9 10 Fig.4 Temperature Versus Gate Threshold Voltage 2.4 1.2 1.15 VGS=10V, ID=200mA 2.0 VGS(th), Threshold Voltage RDS(ON), Static Drain-Source On-Resistance 1 VGS, Gate-Source Voltage (V) Fig.3 Temperature Versus Static Drain-Source On-Resistance 2.2 -55°C 1.8 1.6 1.4 1.2 1.0 0.8 VDS=VGS, ID=1.0mA 1.1 1.0 0.9 0.8 0.6 0.4 -60 -20 +20 +60 +100 +140 T, Temperature (°C) 0.7 -60 -20 +20 +60 +100 +140 T, Temperature (°C) VGS=5V, ID=0.05A Company reserves the right to improve product design , functions and reliability without notice. QW-JTR09 REV: A Page 3 MOSFET Reel Taping Specification d P0 P1 T E Index hole F W B P C A 12 o 0 D2 D1 D W1 Trailer ....... ....... End Device ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.10 ± 0.10 2.85 ± 0.10 1.40 ± 0.10 1.55 ± 0.10 178 ± 1 50.0 MIN. 13.0 ± 0.20 (inch) 0.122 ± 0.004 0.112 ± 0.004 0.055 ± 0.004 0.061 ± 0.004 7.008 ± 0.04 1.969 MIN. 0.512 ± 0.008 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 8.00 ± 0.30 14.4 MAX. (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 ± 0.008 0.567 MAX. Company reserves the right to improve product design , functions and reliability without notice. QW-JTR09 REV: A Page 4 MOSFET Product marking code Marking Code ∑ : Month Code Part Number Marking Code 2N7002K-HF 702 ∑ 3 702 ∑ X 1 XX 2 “ • ” or “••” or “–” :Traceablity code Month Code: Month Odd Year (per A.D.) Even Year (per A.D.) Month Odd Year (per A.D.) Even Year (per A.D.) Jan 1 E Jul 7 N Feb 2 F Aug 8 P Wer 3 H Sep 9 U Apr 4 J Oct T X May 5 K Nov V Y Jun 6 L Dec C Z Suggested PAD Layout SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 0.90 0.035 C 0.95 0.037 D 2.00 0.079 B D A E E C 0.114 2.90 Standard Packaging REEL PACK Case Type SOT-23 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. QW-JTR09 REV: A Page 5