QW-JTR09 2N7002K

MOSFET
2N7002K-HF
N-Channel
RoHS Device
Halogen Free
SOT-23
Features
0.120 (3.04)
0.110 (2.80)
-Small Signal MOSFET.
3
0.055 (1.40)
0.047 (1.20)
-ESD protected: 1000V.
2
1
0.080 (2.04)
0.070 (1.78)
Marking: 702
Equivalent Circuit
0.044 (1.11)
0.035 (0.89)
0.007 (0.18)
0.003 (0.08)
0.104 (2.64)
0.083 (2.10)
D
G : Gate
S : Source
D : Drain
G
0.020 (0.50)
0.015 (0.37)
S
0.004 (0.100)
0.001 (0.013)
0.027 (0.69)
0.014 (0.35)
Dimensions in inches and (millimeter)
Maximum Ratings (at T =25°C unless otherwise noted)
A
Symbol
Value
Unit
Drain-Source voltage
VDSS
60
Vdc
Drain-Gate Voltage (RGS=1.0 MΩ)
VDGR
60
Vdc
@Continuous TC=25°C(Note 1)
ID
±115
@Continuous TC=100°C(Note 1)
ID
±75
@Pulsed (Note 2)
IDM
±800
@Continuous
VGS
±20
Vdc
VGSM
±40
Vpk
Symbol
Max. Value
Unit
PD
225
mW
1.8
mW/°C
RΘJA
556
°C/W
PD
300
mW
2.4
mW/°C
RΘJA
417
°C/W
TJ, TSTG
-55 to +150
°C
Rating
Drain current
mAdc
Gate-Source voltage
@Non-repetitive (tp≤50μs)
Thermal Characteristics
Characteristics
Total Device Dissipation FR–5 Board (Note 3)
@TA = 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate (Note 4)
@TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Note: 1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.
3. FR-5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR09
REV: A
Page 1
MOSFET
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
(VGS=0V, VDS=60V)
Conditions
VGS=0V, ID=10μA
Symbol
Min.
V(BR)DSS
60
Typ.
Max.
Unit
V
TJ=25°C
1.0
μA
IDSS
TJ=125°C
500
Gate–Body Leakage Current, Forward
VGS=20V
IGSSF
1
μA
Gate–Body Leakage Current, Reverse
VGS=-20V
IGSSR
-1
μA
2.5
V
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
VDS=VGS, ID=250μA
VGS(th)
1
On-State Drain Current
VDS≥2.0VDS(ON), VGS=10V
ID(ON)
500
1.5
mA
VGS=10V, ID=500mA
Static Drain-Source On-State Voltage
3.75
VDS(ON)
V
VGS=5V, ID=50mA
0.375
VGS=10V, ID=500mA @TC=25°C
Static Drain-Source
On-State Resistance
1.4
VGS=10V, ID=500mA @TC=125°C
13.5
RDS(ON)
Ω
VGS=5V, ID=50mA @TC=25°C
1.8
VGS=5V, ID=50mA @TC=125°C
Forward Transconductance
7.5
VDS≥2.0VDS(ON), ID=200mA
7.5
13.5
gfs
80
mS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
Ciss
17
50
Coss
10
25
Crss
2.5
5.0
pF
SWITCHING CHARACTERISTICS (Note 1)
Turn-On Delay Time
VDD=25V, ID=500mA,
td(on)
7
20
Turn-Off Delay Time
RG=25Ω, RL=50Ω, VGΕΝ=10V
td(off)
11
40
Diode Forward On-Voltage
IS=115mA, VGS=0V
VSD
-1.5
V
Source Current Continuous
Body Diode
IS
-115
mA
ISM
-800
mA
nS
BODY–DRAIN DIODE RATINGS
Source Current Pulsed
Note: 1. Pulse Test: Pulse Width ≦300μs , Duty Cycle ≦2.0%.
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR09
REV: A
Page 2
MOSFET
RATING AND CHARACTERISTIC CURVES (2N7002K-HF)
Fig.1 Ohmic Region
Fig.2 Transfer Characteristics
2.0
1.0
VDS = 10V
1.6
VGS=10V
1.4
9V
1.2
ID, Drain-Source Current (A)
ID, Drain-Source Current (A)
1.8
8V
1.0
7V
0.8
0.6
6V
0.4
5V
0.2
4V
3V
0
0
1
2
3
4
5
6
7
8
9
25°C
0.8
125°C
0.6
0.4
0.2
0
10
0
VDS, Drain-Source Voltage (V)
3
2
4
5
6
7
8
9
10
Fig.4 Temperature Versus Gate
Threshold Voltage
2.4
1.2
1.15
VGS=10V, ID=200mA
2.0
VGS(th), Threshold Voltage
RDS(ON), Static Drain-Source
On-Resistance
1
VGS, Gate-Source Voltage (V)
Fig.3 Temperature Versus Static
Drain-Source On-Resistance
2.2
-55°C
1.8
1.6
1.4
1.2
1.0
0.8
VDS=VGS, ID=1.0mA
1.1
1.0
0.9
0.8
0.6
0.4
-60
-20
+20
+60
+100
+140
T, Temperature (°C)
0.7
-60
-20
+20
+60
+100
+140
T, Temperature (°C)
VGS=5V, ID=0.05A
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR09
REV: A
Page 3
MOSFET
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
P
C
A
12
o
0
D2
D1 D
W1
Trailer
.......
.......
End
Device
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
SOT-23
SOT-23
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.10 ± 0.10
2.85 ± 0.10
1.40 ± 0.10
1.55 ± 0.10
178 ± 1
50.0 MIN.
13.0 ± 0.20
(inch)
0.122 ± 0.004
0.112 ± 0.004
0.055 ± 0.004
0.061 ± 0.004
7.008 ± 0.04
1.969 MIN.
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
8.00 ± 0.30
14.4 MAX.
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.315 ± 0.008
0.567 MAX.
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR09
REV: A
Page 4
MOSFET
Product marking code
Marking Code
∑ : Month Code
Part Number
Marking Code
2N7002K-HF
702 ∑
3
702 ∑
X
1
XX
2
“ • ” or “••” or “–” :Traceablity code
Month Code:
Month
Odd Year
(per A.D.)
Even Year
(per A.D.)
Month
Odd Year
(per A.D.)
Even Year
(per A.D.)
Jan
1
E
Jul
7
N
Feb
2
F
Aug
8
P
Wer
3
H
Sep
9
U
Apr
4
J
Oct
T
X
May
5
K
Nov
V
Y
Jun
6
L
Dec
C
Z
Suggested PAD Layout
SOT-23
SIZE
(mm)
(inch)
A
0.80
0.031
B
0.90
0.035
C
0.95
0.037
D
2.00
0.079
B
D
A
E
E
C
0.114
2.90
Standard Packaging
REEL PACK
Case Type
SOT-23
REEL
Reel Size
( pcs )
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR09
REV: A
Page 5