QW-JTR04 CJ3401-HF RevB

MOSFET
CJ3401-HF
P-Channel
RoHS Device
Halogen Free
Features
SOT-23
- High dense cell design for extremely low RDS(ON)
1. GATE
2. SOURCE
3. DRAIN
0.118(3.00)
0.110(2.80)
- Exceptional on-resistance and maximum
DC current capability.
3
0.055(1.40)
0.047(1.20)
1
Mechanical data
2
0.079(2.00)
0.071(1.80)
- Case: SOT-23, molded plastic.
0.041(1.05)
0.035(0.90)
- Terminals: Solderable per MIL-STD-750,
method 2026.
0.045(1.15)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
Circuit diagram
0.037(0.95)
TYP.
D
0.004(0.10)
0.000(0.00)
0.006(0.15)
0.003(0.08)
0.022(0.55)
REF.
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
G
S
Maximum Ratings (at Ta=25°C unless otherwise noted)
Symbol
Value
Units
Maximum drain-source voltage
VDS
-30
V
Maximum gate-source voltage
VGS
±12
V
Maximum continuous drain current
ID
-4.2
A
Maximum power dissipation
PD
350
mW
RθJA
357
°C/W
Junction temperature
TJ
150
°C
Storage temperature
TSTG
-55 to +150
°C
Parameter
Thermal resistance from junction to ambient (t<5s)
Company reserves the right to improve product design , functions and reliability without notice.
REV: B
Page 1
QW-JTR04
Comchip Technology CO., LTD.
MOSFET
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS=0V , ID=-250µA
-30
V
Zero gate voltage drain current
IDSS
VDS=-24V , VGS=0V
-1
µA
Gate-source leakage current
IGSS
VGS=±12V , VDS=0V
±100
nA
On characteristics
Drain-source on-resistance (note 1)
Forward transconductance (note 1)
Gate threshold voltage
RDS(on)
gFS
VGS =-10V , ID=-4.2A
48
65
mΩ
VGS=-4.5V , ID=-4A
62
75
mΩ
VGS=-2.5V , ID=-1A
88
90
mΩ
VDS=-5V , ID=-5A
VGS(th)
VDS=VGS , ID=-250µA
7
S
-1.3
-0.7
V
Dynamic characteristics (note 2)
Input capacitance
ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
VDS=-15V , VGS=0V, f=1MHZ
954
pF
115
pF
77
pF
Switching Characteristics (note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
td(on)
VGS=-10V , VDS=-15V
tr
td(off)
RL=3.6Ω , RGEN=6Ω
tr
6.3
nS
3.2
nS
38.2
nS
12
nS
-1
V
Drain-source diode characteristics and maximum ratings
Diode forward voltage (note 1)
VSD
IS=-1A , VGS=0V
Note:
1. Pulse Test: Pulse width≤300μs, duty cycle≤2%.
2. These parameters have no way to verify.
Company reserves the right to improve product design , functions and reliability without notice.
REV: B
Page 2
QW-JTR04
Comchip Technology CO., LTD.
MOSFET
RATING AND CHARACTERISTIC CURVES (CJ3401-HF)
Fig.2 - Transfer Characteristics
Fig.1 - Output Characteristics
-25
Ta=25°C
-5
VGS=-10V
Ta=25°C
Pulsed
VGS=-4.5V
Pulsed
-4
VGS=-3.0V
Drain Current, ID (A)
Dran Current, (A)
-20
-15
VGS=-2.5V
-10
VGS=-2.0V
-5
-0
-0
-1
-3
-2
-2
-1
-0
-5
-4
-3
-0
Drain to Source Voltage, VDS (A)
-0.5
-1.0
-1.5
Fig.4 - RDS(ON) — VGS
Fig.3 - RDS(ON) — ID
180
180
Ta=25°C
Ta=25°C
Pulsed
Pulsed
150
120
ON-Resistance, RDS(ON) (mΩ)
150
ON-Resistance, RDS(ON) (mΩ)
-2.5
-2.0
Gate to Source Voltage, VGS (V)
VGS=-2.5V
90
VGS=-4.5V
60
VGS=-10V
30
120
90
ID=-2A
60
30
0
-2
-0
-4
-6
-8
0
-0
Drain Current, ID (A)
-2
-4
-6
-8
-10
Gate to Source Voltage, VGS (V)
Fig.5 - IS — VSD
-10
Source Current, Is (A)
-1
-0.1
-0.01
-1E-3
-1E-4
-1E-5
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Source to Drain Voltage, VSD (V)
Company reserves the right to improve product design , functions and reliability without notice.
REV: B
Page 3
QW-JTR04
Comchip Technology CO., LTD.
MOSFET
Reel Taping Specification
P1
W
B
F
E
d
P0
A
P
SOT-23
SOT-23
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.15 ± 0.10
2.77 ± 0.10
1.22 ± 0.10
1.50 + 0.10
178 ± 2.0
54.40 ± 1.0
13.00 ± 1.0
(inch)
0.124 ± 0.004
0.109 ± 0.004
0.048 ± 0.004
0.059 + 0.004
7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 /–0.10
9.50 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.158 ± 0.004
0.158 ± 0.004
0.079 ± 0.004 0.315 + 0.012 /–0.004 0.374 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV: B
Page 4
QW-JTR04
Comchip Technology CO., LTD.
MOSFET
Marking Code
3
Part Number
Marking Code
CJ3401-HF
R1
XX
1
2
XX = Product type marking code
Suggested PAD Layout
B
SOT-23
SIZE
(mm)
(inch)
A
0.80
0.031
B
0.60
0.024
C
1.90
0.075
D
2.02
0.080
A
D
C
Standard Packaging
REEL PACK
Case Type
SOT-23
REEL
Reel Size
( pcs )
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV: B
Page 5
QW-JTR04
Comchip Technology CO., LTD.