MOSFET BSS138-G N-Channel 50-V(D-S) MOSFET RoHS Device Features 1 : Gate 2 : Source 3 : Drain -High density cell design for extremely low RDS(ON). -Rugged and Reliable. SOT-23 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Mechanical data 1 -Case: SOT-23, molded plastic. 2 0.079(2.00) 0.071(1.80) -Terminals: solderable per MIL-STD-750, method 2026. 0.006(0.15) 0.003(0.08) 0.041(1.05) 0.035(0.90) 0.100(2.55) 0.089(2.25) Circuit diagram 0.004(0.10) max D 0.020(0.50) 0.012(0.30) 0.020(0.50) 0.012(0.30) Dimensions in inches and (millimeter) G S Maximum Ratings (at Ta=25°C unless otherwise noted) Symbol Value Units Drain-source voltage VDS 50 V Continuous gate-source voltage VGS ±20 V Continuous drain current ID 0.22 A Power dissipation PD 0.35 W RΘJA 357 °C/W TJ 150 °C TSTG -55 to +150 °C Parameter Thermal resistance from Junction to ambient Operating temperature Storage temperature Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 1 QW-BTR40 Comchip Technology CO., LTD. MOSFET Electrical Characteristics ( T =25°C unless otherwise noted) A Parameter Conditions Symbol Min 50 Typ Max Unit V V Off characteristics Drain-Source breakdown voltage VGS=0V, ID=250μA V(BR)DSS Gate-body leakage VDS=0V, VGS=±20V IGSS ±100 nA VDS=50V, VGS=0V IDSS 0.5 μA VDS=30V, VGS=0V IDSS 100 nA Gate-threshold voltage (note 1) VDS=VGS, ID=1mA VGS(th) 1.5 V Static drain-source on-resistance (note 1) VGS=10V, ID=0.22A Forward transconductance (note 1) VDS=10V, ID=0.22A Zero gate voltage drain current On characteristics VGS=4.5V, ID=0.22A 0.8 3.5 Ω RDS(ON) gFS 6 0.12 S Dynamic characteristics (note 2) Input capacitance Output capacitance VDS=25V, VGS=0V, f=1MHz Reverse transfer capacitance Ciss 27 Coss 13 Crss 6 pF Switching Characteristics Turn-on delay time (note 1,2) Rise time (note 1,2) Turn-off delay time (note 1,2) VDD=30V, VDS=10V, ID=0.29A, RGEN=6Ω Fall time (note 1,2) td(on) 5 tr 18 td(off) 36 tf 14 VSD 1.4 ns Drain-source body diode characteristics Body diode forward voltage (note 1) IS=0.44A, VGS=0V V Note: 1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% 2. These parameters have no way to verify. Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 QW-BTR40 Comchip Technology CO., LTD. MOSFET RATING AND CHARACTERISTIC CURVES (BSS138-G) Fig.1 - Output Characteristics Fig.2 - Transfer Characteristics 0.6 2.0 TA=25°C Pulsed TA=25°C Pulsed 0.5 VGS=10V 5V Drain Current, ID (A) Drain Current, ID (A) 1.5 4V 1.0 3V 0.5 0.4 0.3 0.2 0.1 2V 0 0 1 3 2 0 5 4 0 1 3 2 Gate to Source Voltage, VGS (V) Fig.3 - RDS(ON) － ID Fig.4 - RDS(ON) － VGS 6 3.0 TA=25°C Pulsed TA=25°C Pulsed 2.0 ON-Resistance, RDS(ON) (Ω) 2.5 ON-Resistance, RDS(ON) (Ω) 4 Drain to Source Voltage, VDS (V) VGS= 4.5V 1.5 VGS= 6V VGS= 10V 1.0 0.5 0.0 0.1 0.2 0.4 0.6 0.8 1.0 5 4 3 ID= 500mA 2 1 0 0 Drain Current, ID (A) 2 4 6 8 10 Gate to Source Voltage, VGS (V) Fig.5 - IS － VSD 1 Source Current, IS (A) TA=25°C Pulsed 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source to Drain Voltage, VSD (V) REV:A Page 3 QW-BTR40 Comchip Technology CO., LTD. MOSFET Reel Taping Specification P1 d T F E P0 B W C A P 12 o 0 D2 D1 D W1 SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 Φ1.50 ± 0.10 178 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 Φ0.059 ± 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039 REV:A Page 4 QW-BTR40 Comchip Technology CO., LTD. MOSFET Marking Code Part Number Marking Code 3 BSS138-G SS XX 1 2 xx = Product type marking code Suggested PAD Layout SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 1.90 0.075 C 2.02 0.080 D 2.82 0.111 A C D B Standard Packaging REEL PACK Case Type SOT-23 REEL Reel Size ( pcs ) (inch) 3,000 7 REV:A Page 5 QW-BTR40 Comchip Technology CO., LTD.