QW-BTR30 MMBT2222A-G RevA

Small Signal Transistor
MMBT2222A-G (NPN)
RoHS Device
Features
SOT-23
-NPN silicon epitaxial planar transistor for
switching and amplifier application.
0.119(3.00)
0.110(2.80)
3
0.056(1.40)
Mechanical data
0.047(1.20)
1
-Case: SOT-23, molded plastic.
2
0.083(2.10)
0.066(1.70)
-Terminals: solderable per MIL-STD-750,
method 2026.
0.006(0.15)
0.002(0.05)
-Approx. weight: 0.008 grams
0.044(1.10)
0.103(2.60)
0.035(0.90)
0.086(2.20)
0.006(0.15) max
0.020(0.50)
0.007(0.20) min
0.013(0.35)
Dimensions in inches and (millimeter)
Maximum Ratings and Thermal Characteristics
(at Ta=25 OC unless otherwise noted)
Parameter
Symbol
Value
Units
Collector-Base voltage
VCBO
75
V
Collector-Emitter voltage
VCEO
40
V
Emitter-Base voltage
VEBO
6.0
V
IC
600
mA
Ptot
225
1.9
mW
mW/ OC
Ptot
300
2.4
mW
mW/ OC
RθJA
556
417
TJ
150
O
C
TSTG
-55 to +150
O
C
Collector current
O
Power dissipation
on FR-5 board(1), TA=25
Derate above 25 OC
Power dissipation
on aluminum substrate(2), TA=25
Derate above 25 OC
Thermal resistance, junction
to ambient air
C
FR-5 board
Aluminum substrate
Junction temperature
Storage temperature range
O
C
O
C/mW
Notes:
1. FR-5=1.0×0.75×0.062 in.
2. Alumina=0.4×0.3×0.024 in. 99.5% alumina.
REV:A
Page 1
QW-BTR30
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristics (@TA=25°C unless otherwise noted)
Parameter
DC current gain
Symbol
hFE
Conditions
Min.
VCE=10V, IC=0.1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=10mA, TA=-55
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=1V, IC=150mA
O
C
35
50
75
35
100
40
50
Max.
Units
300
Collector-Base breakdown voltage
V(BR)CBO
IC=10μA, IE=0
75
V
Collector-Emitter breakdown voltage
V(BR)CEO
IC=10mA, IB=0
40
V
Emitter-Base breakdown voltage
V(BR)EBO
IC=10μA, IC=0
6
V
Collector-Emitter saturation voltage
VCEsat
IC=150mA, IB=15mA
IC=500mA, IB=50mA
Base-Emitter saturation voltage
VBEsat
IC=150mA, IB=15mA
IC=500mA, IB=50mA
Collector cut-off current
ICEX
VEB=3V, VCE=60V
Collector cut-off current
ICBO
VCB=60V, IE=0
VCB=50V, IE=0, TA=125
Base cut-off current
IBL
VEB=3V, VCE=60V
Emitter cut-off current
IEBO
VEB=3VDC, IC=0
Current gain-bandwidth product
fT
0.6
O
C
VCE=20V, IC=20mA, f=100MHz
0.3
1
V
1.2
2
V
10
nA
10
10
nA
μA
20
nA
100
nA
300
MHz
Output capacitance
Cobo
VCB=10V, f=1MHz, IE=0
8
pF
Input capacitance
Cibo
VEB=0.5V, f=1MHz, IC=0
25
pF
Noise figure
NF
VCE=10V, IC=100μA, RS=1kΩ,
f=1kHz
4
dB
Input impedance
hie
VCE=10V, IC=1mA, f=1kHz
VCE=10V, IC=10mA, f=1kHz
2
0.25
8
1.25
kΩ
Small signal current gain
hfe
VCE=10V, IC=1mA, f=1kHz
VCE=10V, IC=10mA, f=1kHz
50
75
300
375
Voltage feedback ratio
hre
VCE=10V, IC=1mA, f=1kHz
VCE=10V, IC=10mA, f=1kHz
Output admittance
hoe
VCE=10V, IC=1mA, f=1kHz
VCE=10V, IC=10mA, f=1kHz
5
25
8
4
×10 -4
35
200
μS
rb'CC
IE=20mA, VCB=20V, f=31.8MHz
150
pS
Delay time (see fig.1)
td
IB1=15mA, IC=150mA, VCC=30V,
VBE=-0.5V
10
nS
Rise time (see fig.1)
tr
IB1=15mA, IC=150mA, VCC=30V,
VBE=-0.5V
25
nS
Storage time (see fig.2)
ts
IB1=IB2=15mA, IC=150mA,
VCC=30V
225
nS
Fall time (see fig.2)
tf
IB1=IB2=15mA, IC=150mA,
VCC=30V
60
nS
Collector base time constant
REV:A
Page 2
QW-BTR30
Comchip Technology CO., LTD.
Small Signal Transistor
Switching time equivalent test circuit
Figure 1. Turn-on Time
+30V
1.0 to 100μS, duty cycle=2%
200Ω
+16V
0
Cs* <10pF
1kΩ
-2V
Scope rise time<4nS
*Total shunt capacitance of test jig,
connectors and oscilloscope
<2nS
Figure 2. Turn-off Time
+30V
1.0 to 100μS, duty cycle=2%
200Ω
+16V
0
Cs* <10pF
1kΩ
-14V
<20nS
-4V
REV:A
Page 3
QW-BTR30
Comchip Technology CO., LTD.