PN4122 - New Jersey Semiconductor

G.Z.IIZ.Uu ^^mi-donductoi Lp 10 ducts., Dna
CX
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
PN4122
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA. Sourced
from Process 66. See 2N3906 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Parameter
Symbol
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
5.0
V
Ic
Collector Current - Continuous
200
mA
Tj, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C,
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
TA = 25°C unless otherwise noted
Characteristic
Max
Units
PN4122
RWC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
mW
mW/°C
°C/W
RHJA
Thermal Resistance, Junction to Ambient
200
°C/W
PD
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR}CEO
Collector-Emitter Breakdown Voltage*
lc = 10 mA, I B = 0
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
V(BR)CES
40
V
l c = 10u.A, IE = 0
40
V
I E = 10 nA, lc = 0
5.0
V
Collector-Emitter Breakdown Voltage
IC=10HA
40
nA
IB
Base Cutoff Current
VCE = 30 V
25
nA
ICES
Collector Cutoff Current
VCE = 30 V
VCE = 30 V, TA = 65 °C
25
25
nA
uA
ON CHARACTERISTICS*
DC Current Gain
hFE
VcE(sat)
Collector-Emitter Saturation Voltage
VsE(sat)
Base-Emitter Saturation Voltage
V C E = 1.0V, l c = 100 nA
V C E = 1.0V, l c = 1.0mA
VCE = 1.0V, | c = 10 mA
VCE= 1.0V, lc = 50 mA
lc = 1.0mA, IB = 0.1 mA
l c = 10mA, I B = 1.0mA
lc = 50 mA, l a = 5.0mA
lc = 1.0mA, IB = 0.1 mA
lc = 10mA, I B = 1.0mA
lc = 50 mA, I B = 5.0 mA
100
150
150
30
0.70
300
0.13
0.14
0.30
0.75
0.90
1.10
V
V
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
VCB= 10V, f = 1.0MHz
4.5
PF
Qb
Input Capacitance
V EB = 0.5V, f = 1.0MHz
8.0
PF
hfe
Small-Signal Current Gain
hie
Input Impedance
lc = 10 mA, VCE = 20 V,
f = 100 MHz
l c = 1.0mA, VCE = 10V,
f = 1 kHz
lc = 1.0mA, VCE = 10V,
hre
Voltage Feedback Ratio
f = 1.0kHz
hoe
Output Admittance
rb'Cc
Collector-Base Time Constant
NF
Noise Figure
4.5
150
4.0
8.0
450
12
kn
4.0
x10'4
40
^mhos
50
ps
VCE = 20V, l c = 10mA
f = 80 MHz
VCE = 5.0V, l c = 1.0mA,
R s = 100 n, f = 100MHz,
B w =15MHz
VCE = 5.0V, lc= 100 u.A,
R s = 1.0kQ, PBw= 15.7 kHz
6.0
dB
4.0
dB
Vcc = 30 V, lc = 50 mA,
40
ns
15
ns
ns
SWITCHING CHARACTERISTICS
ton
Tum-on Time
td
Delay Time
tr
Rise Time
toff
Turn-off Time
Vcc = 30 V, lc = 50 mA
150
ta
Storage Time
IBI = 'e2 = 5.0mA
140
ns
ns
tf
Fall Time
40
ns
Pulse Test: Pulse Width < 300 |is, Duty Cycle < 2.0%
IB, = 5.0mA, V BE( O ff) = 3.0V
40
TO-92 (FS PKG Code 92, 94, 96)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.1977
0.185
.1/0
4.70
4.j>2
~
m
i
0.185
0.170
TO-92 (92,94,96)
94
92
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96
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D
B
S
2
B
S
C
G
E
D
3
C
G
B
S
C
G
0.030
0.01 4
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