RB420D Diodes Shottky barrier diode RB420D zLead size figure (Unit : mm) 1.9 2.9±0.2 各リードとも Each lead has same dimension 同寸法 ＋0.1 0.95 1.0MIN. 0.15 －0.06 ＋0.2 (3) 0.8MIN. (1) 0.95 zStructure Silicon epitaxial planar 0.3～0.6 0～0.1 (2) 0.8±0.1 0.95 SMD3 zStructure 1.1±0.2 0.01 1.9±0.2 2.4 ＋0.1 0.4 －0.05 2.8±0.2 zFeatures 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. zDimensions (Unit : mm) 1.6－0.1 zApplication Low current rectification ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code zTaping dimensions (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 3.2±0.1 3.5±0.05 Limits 40 40 100 1 125 -40 to +125 Symbol VRM VR Io IFSM Tj Tstg 5.5±0.2 0～0.5 3.2±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current（*1） Forward current surge peak（60Hz・1cyc）（*1） Junction temperature Storage temperature φ1.05MIN 4.0±0.1 3.2±0.1 8.0±0.2 1.75±0.1 4.0±0.1 1.35±0.1 Unit V V mA A ℃ ℃ (*1)Rating of per diode zElectrical characteristics (Ta=25°C) Parameter Symbol VF1 Forward voltage Min. - Typ. - Max. 0.45 Unit V Reverse current I R1 - - 1 µA Capacitance between terminals Ct1 - 6 - pF Conditions IF=10mA VR=10V VR=10V , f=1MHz Rev.C 1/3 RB420D Diodes zElectrical characteristic curves (Ta=25°C) Ta=125℃ 100 100 100 f=1MHz Ta=25℃ Ta=125℃ Ta=-25℃ 1 0.1 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0.001 0.01 0 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 15 20 25 1 30 0 370 360 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 380 400 REVERSE CURRENT:IR(nA) 390 300 200 100 AVE:425.2mV AVE:370.9mV 0 Ta=25℃ f=1MHz VR=10V n=10pcs 25 20 15 10 5 0 IR DISPERSION MAP 20 Ct DISPERSION MAP 8.3ms 10 5 AVE:5.5A 0 15 PEAK SURGE FORWARD CURRENT:IFSM(A) 15 PEAK SURGE FORWARD CURRENT:IFSM(A) 15 1cyc Ifsm 8.3ms 8.3ms 1cyc 10 5 0 Ifsm t 10 5 0 0.1 1 10 100 0.1 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP 1000 30 AVE:5.81pF AVE:98.96nA σ:1.6771mV Ifsm 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 Ta=25℃ VR=10V n=30pcs VF DISPERSION MAP 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 0.003 0.1 Rth(j-a) Rth(j-c) ｶﾞﾗｽｴﾎﾟｷｼ基板実装時 IM=1mA 10 1ms IF=10mA time FORWARD POWER DISSIPATION:Pf(W) 0.08 100 D=1/2 0.06 REVERSE POWER DISSIPATION:PR (W) PEAK SURGE FORWARD CURRENT:IFSM(A) 10 500 Ta=25℃ Ta=25℃ IF=1A IF=10mA n=30pcs n=10pcs 350 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 5 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 400 FORWARD VOLTAGE:VF(mV) Ta=75℃ 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=75℃ Sin(θ＝180) DC 0.04 0.002 D=1/2 DC 0.001 Sin(θ＝180) 0.02 300us 1 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.C 30 2/3 RB420D Diodes 0.3 0.3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.25 Io t 0.2 DC 0.15 T VR D=t/T VR=20V Tj=125℃ D=1/2 0.1 0.05 Sin(θ＝180) 0A 0V 0.25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V 0.2 Io t DC T VR D=t/T VR=20V Tj=125℃ 0.15 D=1/2 0.1 0.05 Sin(θ＝180) 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1