SiC MOSFET Half Bridge 600 Volt 20 Amp Hermetic MYXMH0600-20CEN Product Overview Features y r a in Benefits • Essentially no switching losses • High voltage 600V isolation • Higher Efficiency • High current 20A • High temperature 210°C m i l e r P • BeO free and RoHS compliant • HMP solder tinned leads available • Electrically Isolated flange • Built in silicon carbide (SiC) Shottky diodes exhibit low forward voltage and superior high temperature performance • No reverse recovery time • Screening options available • Reduction of Heat Sink Requirements Applications • Harsh Environment Rectification • Harsh Environment Regulators ºº Commercial high temperature ºº In accordance with MIL-PRF-19500 ºº Other options available on request • Other packaging options available Absolute Maximum Ratings* (Single Device testing of pins 1,2 & 3 or 3,4 & 5) Symbols Figure 1: TO-258 5 PIN Pin 2 Pin 3 Pin 4 Pin 5 Figure 2: Circuit Diagram Values Units Drain Source Voltage 600 Volts Continuous Drain Current 20 Continuous Drain Current 18 IAR Repetitive Avalanche Current (ID = 20A, VDD = 50 V, L = 3 mH ) TBA Amps VGS Gate Source Voltage -10 / +25 Volts PTOT Total Power Dissipation 77 Watts VDS ID Parameters Pin 1 Amps TJ Junction Temperature Range -55 to +210 o Tstg Storage Temperature Range -55 to +210 o Values Units C C Thermal Properties (Single Device) Symbols RθJC March 2014 Rev 1.0 Parameters Thermal resistance, Junction To Case 2.4 o C / Watt 1 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com SiC MOSFET Half Bridge 600 Volt 20 Amp Hermetic MYXMH0600-20CEN Electrical Characteristics (Single Device) Symbols V(BR)DSS VGS(th) Test Conditions Min Drain Source Breakdown VGS=0V, ID=100µA, TJ =25oC 600 VDS=10V, ID=1mA, TJ=25oC 1.7 2.2 VDS=10V, ID=10mA, TJ=25oC 1.2 3.2 VDS=10V, ID=1mA, TJ=210oC 0.9 1.3 m i l e r P Gate Threshold IDSS Zero Gate Voltage Drain IGSS Gate-Source Leakage Current RDS(On) y r a in Parameters Drain Source On State Resistance Typ Max Units Volts 4.5 Volts VDS=10V, ID=1mA, TJ=210oC TBD VDS=600V, VGS=0V, TJ=25oC 1 100 VDS=600V, VGS=0V, TJ=210oC 10 250 0.06 0.25 µA VGS=20V, VDS=0V, TJ=25oC VGS=20V, ID=20A, TJ=-55oC 70 100 125 VGS=20V, ID=20A, TJ=25oC 70 100 125 VGS=20V, ID=20A, TJ=125oC 90 150 200 VGS=20V, ID=20A, TJ=210oC 120 170 240 Min Typ Max µA mΩ Built in Body Diode Electrical Characteristics (Single Device) Symbols VSD Parameters Diode Forward Voltage Test Conditions VGS=-5V, IF=10A, TJ =25oC 3.3 VGS=-2V, IF=10A, TJ =25oC 3.1 Units Volts Gate Charge Characteristics (Single Device) Symbols Parameters Qgs Gate to Source Charge Qgd Gate to Drain Charge Qg Gate Charge Total March 2014 Rev 1.0 Test Conditions Min Typ Max Units 10.8 VDD =200V, VGS = 0/20V, ID = 20A TJ =25oC 18.0 nC 49.2 2 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com SiC MOSFET Half Bridge 600 Volt 20 Amp Hermetic MYXMH0600-20CEN y r a in CD = 5 PIN TO-258 Package Type ####### = Batch code yyww = Date code MICROSS MYXMH0600-20CEN # # # # ## # y y ww yy = year ww = week m i l e r P (Font and text colour is not representative of actual parts produced) Figure 3: Package Dimensions March 2014 Rev 1.0 3 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com SiC MOSFET Half Bridge 600 Volt 20 Amp Hermetic MYXMH0600-20CEN y r a in * Absolute Maximum Ratings Disclaimer Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions for any duration may affect device reliability and opperational life. Document Title m i l e r P Silicon Carbide MOSFET Half Bridge 600 Volt 20 Amp Hermetic MYXMH0600-20CEN Revision History Revision # History 1.0 Initial release March 2014 Rev 1.0 Release Date March 2014 Status Preliminary 4 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com