GF2208 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 8mΩ ID 13A H C N TREENFET G ® SO-8 0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 Dimensions in inches and (millimeters) 4 0.020 (0.51) 0.013 (0.33) 0.050 (1.27) 0.05 (1.27) 0.04 (1.02) 0.019 (0.48) x 45 ° 0.010 (0.25) 0.009 (0.23) 0.007 (0.18) 0.035 (0.889) 0.025 (0.635) 0.069 (1.75) 0.053 (1.35) 0 °– 8 ° 0.009 (0.23) 0.004 (0.10) 0.165 (4.19) 0.155 (3.94) 0.245 (6.22) Min. 0.050 typ. (1.27) Mounting Pad Layout 0.050(1.27) 0.016 (0.41) Mechanical Data Features Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.5g • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Symbol Drain-Source Voltage A = 25°C unless otherwise noted) Limit Unit VDS 30 VGS ± 20 ID 13 10.5 IDM ± 50 Continuous Source Current (Diode Conduction)(1) IS 2.3 TA = 25°C TA = 70°C PD 2.5 1.6 W TJ, Tstg –55 to 150 °C RθJA 50 °C/W Gate-Source Voltage TA = 25°C TA = 70°C Continuous Drain Current TJ = 150°C(1) Pulsed Drain Current Maximum Power Dissipation(1) Operating Junction and Storage Temperature Range (1) Maximum Junction-to-Ambient Thermal Resistance Notes: (1) Surface mounted on FR4 board, t ≤ 10 sec. V A 7/10/01 GF2208 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T J Parameter = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 – – V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 – 3.0 V Gate-Body Leakage IGSS VDS = 0V, VGS = ± 20V – – ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V – – 1 VDS=30V, VGS=0V, TJ=55°C – – 5 VDS ≥ 5V, VGS = 10V 30 – – VGS = 10V, ID = 13A – 6 8 VGS = 4.5V, ID = 11A – 8.5 11 VDS = 15V, ID = 13A – 50 VDS = 15V, VGS = 4.5V, ID = 13A – 28 39 – 56 85 – 7.5 – – 10 – – 9 14 – 9 14 – 100 167 – 31 62 Static On-State Drain Current(2) ID(on) Drain-Source On-State Resistance(2) RDS(on) Forward Transconductance(2) gfs µA A mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time VDS = 15V, VGS = 10V ID = 13A VDD = 15V, RL = 15Ω tr Turn-Off Delay Time ID ≈ 1A, VGEN = 10V td(off) Fall Time RG = 6Ω tf nC ns Input Capacitance Ciss VGS = 0V – 3128 – Output Capacitance Coss VDS = 15V – 618 – Reverse Transfer Capacitance Crss f = 1.0MHZ – 300 – VSD IS = 2.3A, VGS = 0V – – 1.1 V trr IF = 2.3A, di/dt = 100A/µs – 49 90 ns pF Source-Drain Diode Diode Forward Voltage(2) Source-Drain Reverse Recovery Time Notes: (1) Surface mounted on FR4 board, t ≤ 10 sec. (2) Pulse test; pulse width ≤ 300 µs, VDD duty cycle ≤ 2% Switching Test Circuit ton RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH GF2208 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 10V 6.0V 50 4.5V VDS = 10V 40 40 4.0V ID -- Drain Current (A) ID -- Drain Source Current (A) 50 3.5V 30 3.0V 20 10 30 TJ = 125°C 20 --55°C 25°C 10 VGS = 2.5V 0 0 0 0.5 1 1.5 2 2.5 1 1.5 2 2.5 3 3.5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 4 0.014 1.8 0.012 1.6 RDS(ON) -- On-Resistance (Ω) VGS(th) -- Threshold Voltage (V) ID = 250µA 1.4 1.2 1 0.8 0 25 50 75 100 125 150 VGS = 10V 0.004 1.6 VGS = 10V ID = 13A 1.4 1.2 1 0.8 0.6 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 0 10 20 30 ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature RDS(ON) -- On-Resistance (Normalized) 0.006 0 --25 TJ -- Junction Temperature (°C) --50 VGS = 4.5V 0.008 0.002 0.6 --50 0.01 125 150 40 50 GF2208 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Gate Charge 0.03 10 VDS = 15V ID = 13A VGS -- Gate-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) ID = 13A 0.025 0.02 0.015 TJ = 125°C 0.01 0.005 25°C 0 4 6 8 4 2 10 0 10 20 30 40 50 VGS -- Gate-to-Source Voltage (V) Qg -- Total Gate Charge (nC) Fig. 8 – Capacitance Fig. 9 – Source-Drain Diode Forward Voltage 60 100 4500 VGS = 0V f = 1MHZ VGS = 0V 4000 3500 Ciss IS -- Source Current (A) C -- Capacitance (pF) 6 0 2 3000 2500 2000 1500 1000 10 TJ = 125°C 1 25°C 0.1 --55°C Coss Crss 500 0 8 0.01 0 5 10 15 20 VDS -- Drain-to-Source Voltage (V) 25 30 0 0.2 0.4 0.6 0.8 VSD -- Source-to-Drain Voltage (V) 1 1.2 GF2208 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) 43 100 42 10 41 40 1 39 38 0.1 37 36 0 25 50 75 100 125 150 0.01 0.1 1 10 100 70 60 50 40 30 20 10 0 0.01 0.1 1 10 100