JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR (NPN) TO-92 FEATURES z Power switching applications 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V 0.2 A 0.625 W 150 ℃ IC Collector Current -Continuous PC Collector Power Dissipation Tj Junction Temperature Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 1mA,IE=0 700 Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 400 Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 Collector cut-off current ICBO VCB=600V,IE=0 100 μA Collector cut-off current ICEO VCE=400V,IB=0 100 μA 100 μA Emitter cut-off current DC current gain V 450 V 8 IEBO VEB=7V,IC=0 hFE(1) VCE=20V, IC=20mA 14 hFE(2) VCE=10V, IC=0.25mA 5 hFE(3) VCE=5V, IC=0.5A 1 V 29 Collector-emitter saturation voltage VCE(sat) IC=50mA,IB=10mA 0.4 V Base-emitter saturation voltage VBE(sat) IC=50mA,IB=10mA 1.1 V fT Transition frequency tr ts Rail time Storage time VCE=20V,IC=20mA,f=1MHz IC=0.1A 8 0.9 MHz 0.9 μs 2.4 μs CLASSIFICATION OF hFE(1) Range 14-17 17-20 20-23 23-26 26-29 CLASSIFICATION OF tS Range www.cj-elec.com 0.9-2 (μs ) 1.4-2.4 (μs ) 1 C,Oct,2014 Typical Characteristics Typical Characterisitics 3DD13001 hFE Static Characteristic 40 40 1.35mA DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) VCE=20V COMMON EMITTER Ta=25℃ 1.5mA 30 —— IC 1.2mA 1.05mA 900uA 20 750uA 600uA 450uA 10 30 Ta=100℃ Ta=25℃ 20 10 300uA IB=150uA 0 0 10 20 30 40 COLLECTOR-EMITTER VOLTAGE VCEsat 500 —— VCE 0 0.1 50 1 0.3 (V) 3 10 COLLECTOR CURRENT IC VBEsat 1.2 —— 200 100 30 IC (mA) IC β=5 1.0 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 300 Ta=100℃ 100 Ta=25℃ 30 0.8 Ta=25℃ Ta=100℃ 0.6 0.4 0.2 10 0.1 β=5 0.3 3 1 30 10 COLLECTOR CURRENT IC —— IC 100 0.0 0.1 200 0.3 3 1 (mA) 30 10 COLLECTOR CURRENT VBE Cob/ Cib 200 —— IC VCB/ VEB f=1MHz IE=0/IC=0 100 Ta=100℃ CAPACITANCE C (pF) COLLCETOR CURRENT IC (mA) 200 300 VCE=20V 100 30 Ta=25℃ 10 3 Ta=25℃ Cib 30 10 Cob 3 1 0.4 0.6 0.8 BASE-EMMITER VOLTAGE PC 1.0 COLLECTOR POWER DISSIPATION PC (W) 100 (mA) —— VBE 1 0.1 1.0 0.3 1 REVERSE VOLTAGE (V) 10 3 V 20 (V) Ta 0.8 0.6 0.4 0.2 0.0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 2 C,Oct,2014 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.400 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.173 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 C,Oct,2014 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP4 C,Oct,2014