222

NTE222
Field Effect Transistor
Dual Gate N−Channel MOSFET
TO72 Type Package
Absolute Maximum Ratings:
Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Reverse Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −10mA
Forward Gate Current, IGF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +25 C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/ C
Total Device Dissipation (TC = +25 C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2mW
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8mW/ C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +175 C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +175 C
Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300 C
Electrical Characteristics: (TA = +25 C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
25
−
−
V
OFF Characteristics
Drain−Source Breakdown Voltage
V(BR)DSX
ID = 10mA, VG1 = VG2 = −5V
Gate 1−Source Breakdown Voltage
V(BR)G1SO IG1 = D10mA, Note 1
D6
−
D30
V
Gate 2−Source Breakdown Voltage
V(BR)G2SO IG2 = D10mA, Note 1
D6
−
D30
V
Gate 1 Leakage Current
IG1SS
VG1S = D5V, VG2S = VDS = 0
−
−
D10
nA
Gate 2 Leakage Current
IG2SS
VG2S = D5V, VG1S = VDS = 0
−
−
D10
nA
Gate 1 to Source Cutoff Voltage
VG1S(off)
VDS = 15V, VG2S = 4V, ID = 20mA
−0.5
−
−4.0
V
Gate 2 to Source Cutoff Voltage
VG2S(off)
VDS = 15V, VG1S = 0V, ID = 20mA
−0.2
−
−4.0
V
IDSS
VDS = 15V, VG2S = 4V, VG1S = 0V
6
−
30
mA
|Yfs|
VDS = 15V, VG2S = 4V, VG1S = 0V,
f = 1kHz, Note 3
10
−
22
mmhos
ON Characteristics (Note 2)
Zero−Gate−Voltage Drain Current
Small−Signal Characteristics
Forward Transfer Admittance
Note 1. All gated breakdown voltages are measured while the device is conducting rated gate current. This insures that the gate voltage limiting network is functioning properly.
Note 2. Pulse Test: Pulse Width = 30ms, Duty Cycle m 2%.
Note 3. This parameter must be measured with bias voltages applied for less than five (5) seconds
to avoid overheating.
Rev. 10−13
Electrical Characteristics (Cont’d): (TA = +25 C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−
3.3
−
pF
0.005
−
0.03
pF
Small−Signal Characteristics (Cont’d)
Input Capacitance
Ciss
VDS = 15V, VG2S = 4V, ID = IDSS,
f = 1MHz
Reverse Transfer Capacitance
Crss
VDS = 15V, VG2S = 4V, ID = 10mA,
f = 1MHz
Output Capacitance
Coss
VDS = 15V, VG2S = 4V, ID = IDSS,
f = 1MHz
−
1.4
−
pF
NF
VDD = 18V, VGG = 7V, f = 200MHz
−
−
3.5
dB
VDD = 15V, VG2S = 4V, ID = 10mA,
f = 200MHz
−
−
5.0
dB
VDD = 18V, VGG = 7V, f = 200MHz
20
−
28
dB
VDD = 15V, VG2S = 4V, ID = 10mA,
f = 200MHz
14
−
−
dB
VDD = 18V, VGG = 7V, f = 200MHz
7
−
12
MHz
VDD = 18V, fLO = 245MHz,
fRF = 200MHz, Note 5
4
−
7
MHz
VDD = 18V, DGps = 300dB,
f = 200MHz, Note 4
0
−
−2.0
V
Functional Characteristics
Noise Figure
Common Source Power Gain
Bandwidth
Gain Control Gate−Supply Voltage
Gps
BW
VGG(GC)
Note 4. DGps is defined as the change in Gps from the value at VGG = 7V.
Note 5. Amplitude at input from local oscillator is 3V RMS.
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.030 (.762)
.500
(12.7)
Min
D
G2
G1
.018 (0.45) Dia
Gate 2
Drain
Gate 1
45
Source/Case
.040 (1.02)
S, Case