JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N3828 TRANSISTOR (NPN) 1. EMITTER FEATURES z General Purpose Amplifier Transistor 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 3 V 0.1 A Collector Current IC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ PC RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.01mA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=0.01mA,IC=0 3 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Collector cut-off current ICEX VCE=30V,VBE（off）=3V 50 nA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA hFE VCE=1V, IC=12mA Collector-emitter saturation voltage VCE(sat) IC=50mA,IB=5mA 0.3 V Base-emitter saturation voltage VBE (sat) IC=50mA,IB=5mA 0.95 V DC current gain Transition frequency www.cj-elec.com fT VCE=20V,IC=10mA,f=100 MHz 1 30 360 200 MHz C,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.700 3.300 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 2 C,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP3 C,Dec,2015