JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N5087 TRANSISTOR (PNP) 1. EMITTER FEATURES z General Purpose Amplifier Transistor 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -3 V IC Collector Current -50 mA PC Collector Power Dissipation 625 mW Thermal Resistance From Junction To Ambient 200 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-0.1mA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-0.01mA,IC=0 -3 V Collector cut-off current Emitter cut-off current VCB=-35V,IE=0 ICBO VEB=-3V,IC=0 IEBO hFE(1)* DC current gain * hFE(2) hFE(3)* Collector-emitter saturation voltage VCE(sat) * Base-emitter voltage VBE Collector output capacitance Cob Transition frequency fT * VCE=-5V, IC=-0.1mA 250 VCE=-5V, IC=-1mA 250 VCE=-5V, IC=-10mA 250 -50 nA -50 nA 800 IC=-10mA,IB=-1mA -0.3 V VCE=-5V, IC=-10mA -0.85 V 4 pF VCB=-5V,IE=0, f=1MHz VCE=-5V,IC=-0.5mA, f=100MHz 40 MHz *Pulse test: pulse width ≤380μs, duty cycle≤ 2.0%. www.cj-elec.com 1 C,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.700 3.300 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 2 C,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP3 C,Dec,2015