JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N4400 TRANSISTOR (NPN) 1. EMITTER FEATURES z General Purpose Amplifier Transistor 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 0.6 A PC Collector Power Dissipation 625 mW Thermal Resistance From Junction To Ambient 200 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 6 V Collector cut-off current ICBO VCB=60V,IE=0 Emitter cut-off current IEBO DC current gain hFE VEB=6V,IC=0 * * Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE (sat) * VCE=1V, IC=1mA 20 VCE=1V, IC=10mA 40 VCE=1V, IC=150mA 50 VCE=2V, IC=500mA 20 0.1 μA 0.1 μA 150 IC=150mA,IB=15mA 0.4 V IC=500mA,IB=50mA 0.75 V 0.95 V IC=500mA,IB=50mA 1.2 V 6.5 pF IC=150mA,IB=15mA Collector output capacitance Cob VCB=5V,IE=0, f=1MHz Emitter input capacitance Cib VEB=5V,IC=0, f=1MHz Transition frequency fT VCE=10V,IC=20mA, f=100MHz 0.75 30 200 pF MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. www.cj-elec.com 1 C,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.700 3.300 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 2 C,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP3 C,Dec,2015