JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2X2-6L-A Plastic-Encapsulate MOSFETS CJMP06 P-Channel Power MOSFET V(BR)DSS DFNWB2*2-6L-A ID RDS(on)MAX 110mΩ@-4.5 V -20V -2A 150mΩ@-2.5V FEATURE z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design z Ultra Low VF Schottky APPLICATIONS z Li-Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Device for Small Brushless DC Motors z Power Managemnet in Portable , Battery Powered Products MARKING: Equivalent Circuit A K 1 6 K 5 G 4 S PIN 1 front back N/C 2 D 3 D MOSFET MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID -2 A Power Dissipation PD 0.7 W RθJA 178 ℃/W Storage Temperature Tj 150 Junction Temperature Tstg -55 ~+150 V Thermal Resistance from Junction to Ambient www.cj-elec.com 1 ℃ D,May,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Symbol Parameter Test Condition Min Typ Max Unit On/Off Characteristics Drain-source breakdown voltage Gate-threshold voltage V(BR)DSS VGS = 0V, ID =-250µA -20 VGS(th) VDS =VGS, ID =-250µA -0.4 V -1 Gate-body leakage current IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =-20V, VGS =0V -1 µA VGS =-4.5V, ID =-2.8A 110 VGS =-2.5V, ID =-2.0A 150 Drain-source on-state resistance (note 1) RDS(on) Forward transconductance (note 1) gFS mΩ 5.5 VDS =-10V, ID =-2.7A S Charges , Capacitances and Gate resistance Input capacitance (note 2) Ciss 480 Output capacitance (note 2) Coss Reverse transfer capacitance (note 2) Crss 10 Total gate charge Qg 7.2 Gate-source charge Qgs Gate-drain charge Qgd 1.2 td(on) 38 VDS =-15V,VGS =0V,f =1MHz pF 46 VDS =-6V,VGS =-4.5V,ID =-2.8A nC 2.2 Switching times (note2) Turn-on delay time Rise time tr Turn-off delay time td(off) Fall time VDS=-6V, RL=6Ω, 25 VGS=-4.5V,RGEN=6Ω 43 tf ns 5 Source-drain diode characteristics Forward on voltage (note1) VSD VGS =0V, IS=-1A -1.4 V Notes: 1. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 2. These parameters have no way to verify. SCHOTTKY DIODE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Peak Repetitive Reverse Voltage VRRM 20 DC blocking voltage VR 20 Average rectified forward current IF 1 Unit V A SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise noted) Parameter Forward voltage Symbol VF Test Condition www.cj-elec.com IR Typ Max IF =0.1A 0.4 IF =0.5A 0.5 IF =1A Reverse current Min 0.575 VR =20V 15 VR =10V 5 2 Unit µA D,May,2015 7\SLFDO&KDUDFWHULVWLFV Output Characteristics -5 Transfer Characteristics -5 o Ta=25 C Pulsed VGS=-3.5V,-3V,-2.5V,-2.2V,-2V,-1.8V -4 -4 (A) ID ID (A) VGS=-1.6V -3 DRAIN CURRENT DRAIN CURRENT -3 VGS=-1.4V -2 VGS=-1.2V -2 -1 -1 VGS=-1.0V -0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE VDS -0 -5 -1 -2 GATE TO SOURCE VOLTAGE RDS(ON) —— ID 200 -0 (V) RDS(ON) —— 180 -3 VGS (V) VGS o o (mΩ) Ta=25 C Pulsed (mΩ) Ta=25 C Pulsed RDS(ON) RDS(ON) VGS=-1.8V ON-RESISTANCE ON-RESISTANCE 150 VGS=-2.5V 100 VGS=-4.5V 50 -0 -1 -2 -3 DRAIN CURRENT -4 ID 140 120 ID=-2.1A 100 80 -5 -0 (A) -3 -6 -9 Forward 1 VGS -18 (V) Characteristics FORWARD CURRENT SOURCE CURRENT IF (A) -1 -15 -12 GATE TO SOURCE VOLTAGE IS —— VSD -4 IS (A) 160 -0.3 -0.1 -0.03 o o Ta=25 C Pulsed Ta=25 C Pulsed -0.01 -0.2 -0.4 -0.6 -0.8 -1.0 SOURCE TO DRAIN VOLTAGE Reverse 0.1 0.2 -1.4 VSD (V) 0.3 0.4 FORWARD VOLTAGE 0.5 VF 0.6 (V) Characteristics REVERSE CURRENT IR (uA) 10 -1.2 1 o Ta=25 C Pulsed 0.1 0 5 10 REVERSE VOLTAGE www.cj-elec.com 15 VR 20 (V) 3 D,May,2015 DFNWB2X2-6L-A Package Outline Dimensions N3 N4 N1 N6 DFNWB2X2-6L-A www.cj-elec.com 4 D,May,2015 DFNWB2X2-6L Tape and Reel www.cj-elec.com 5 D,May,2015