GF4810 N-Channel MOSFET & Schottky Diode MOSFET: VDS 30V RDS(ON) 13.5mΩ ID 10A Schottky: VR 30V VF 0.53V IF 4.0A SO-8 0.197 (5.00) 0.189 (4.80) 5 8 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 4 1 0.020 (0.51) 0.013 (0.33) 0.050 (1.27) H C N TREENFET oduct G New Pr ® Dimensions in inches and (millimeters) 0.019 (0.48) x 45 ° 0.010 (0.25) K D D D 8 7 6 5 1 2 3 4 A S S G Mounting Pad Layout 0.05 (1.27) 0.04 (1.02) 0.165 (4.19) 0.155 (3.94) 0.245 (6.22) Min. 0.009 (0.23) 0.007 (0.18) 0.069 (1.75) 0.053 (1.35) 0 °– 8 ° 0.009 (0.23) 0.004 (0.10) 0.050(1.27) 0.016 (0.41) 0.035 (0.889) 0.025 (0.635) 0.050 typ. (1.27) Mechanical Data Features Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight: 0.5g • Enhancement mode MOSFET and Schottky Diode in a compact package • Advanced Trench Process Technology and high Density Cell Design for Ultra Low On-Resistance • Suitable for Low Voltage DC/DC Converters • High performance Schottky diode with low VF and high IF Maximum Ratings and Thermal Characteristics (T A = 25°C unless otherwise noted) MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 ID 10 8 IDM 50 IS 2.3 PD 2.3 1.5 W TJ, Tstg –55 to 150 °C RθJA 55 °C/W VR 30 V PD 1.4 0.9 W Continuous Drain Current (TJ = 150°C) (1) TA = 25°C TA = 70°C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction)(1) Maximum Power Dissipation (1) TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-to-Ambient (1) Unit V A Schottky Reverse Voltage Maximum Power Dissipation (1) TA = 25°C TA = 70°C Average Forward Current (1) Pulsed Forward Current Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-to-Ambient Notes: (1) Surface Mounted on FR4 Board, t ≤ 10 sec. (1) IF 4.0 IFM 50 TJ, Tstg –55 to 150 °C RθJA 90 °C/W A 4/27/01 GF4810 N-Channel MOSFET With Schottky Diode Electrical Characteristics (T J = 25°C unless otherwise noted) MOSFET Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 – – V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 – – V Gate-Body Leakage IGSS VDS = 0V, VGS = ± 20V – – ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V – – 1 VDS=30V, VGS=0V, TJ=55°C – – 5 On-State Drain Current (1) ID(on) VDS ≥ 5V, VGS = 10V 20 – – VGS = 10V, ID = 10A – 11.5 13.5 VGS = 4.5V, ID = 5A – 15.5 20 gfs VDS = 15V, ID = 10A – 28 – S VSD IS = 2.3A, VGS = 0V – 0.75 1.1 V – 20 30 – 5 – Static Drain-Source On-State Resistance(1) Forward Transconductance(1) (1) Diode Forward Voltage RDS(on) µA A mΩ Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd – 7 – Turn-On Delay Time td(on) – 10 30 – 9 15 – 47 90 – 13 40 – 1850 – – 315 – – 150 – IF = 3.0A – 0.495 0.53 IF = 2.3A, TJ = 125°C – 0.420 0.47 VR = 30V – 0.015 0.100 VR = 30V, TJ = 125°C – 6.5 20 Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS = 15V, VGS = 5V, ID = 10A VDD = 15V, RL = 15Ω ID ≅ 1A, VGEN=10V, RG=6Ω tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0V f = 1.0MHz nC ns pF Schottky Diode Forward Voltage (1) VF Reverse Leakage Current IR Notes: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% V mA GF4810 N-Channel MOSFET With Schottky Diode Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 50 VGS = 5.0V, 6.0V, 8.0V, 10V 4.5V 4.0V 3.5V 40 VDS = 10V 30 3.0V 20 10 30 20 TJ = 25°C 0 0 1 2 3 4 5 0 1 2 3 4 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 5 0.02 1.4 ID = 250µA RDS(ON) -- On-Resistance (Ω) VGS(th) -- Gate-to-Source Threshold Voltage (Normalized) TJ = 125°C 10 2.5V 0 1.2 1.0 0.8 0.6 --50 --25 0 25 50 75 100 125 150 VGS = 4.5V 0.016 0.014 VGS = 10V 0.012 1.6 VGS = 10V ID = 10A 1.4 1.2 1 0.8 0.6 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 0 10 20 30 ID -- Drain Current (A) TJ -- Junction Temperature (°C) --50 0.018 0.01 0.4 Fig. 5 – On-Resistance vs. Junction Temperature RDS(ON) -- On-Resistance (Normalized) TJ = -55°C 40 ID -- Drain Current (A) ID -- Drain-to-Source Current (A) 50 125 150 40 50 GF4810 N-Channel MOSFET With Schottky Diode Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) GF4810 N-Channel MOSFET With Schottky Diode Ratings and Characteristic Curves (T A = 25°C unless otherwise noted)