JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors KSD1692 TRANSISTOR (NPN) TO – 126 FEATURES z High DC Current Gain z Low Collector Saturation Voltage z High Power Dissipation 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current 3 A PC Collector Power Dissipation 1.25 W Thermal Resistance From Junction To Ambient 100 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage V(BR)CBO * VCEO(SUS) V(BR)EBO Emitter-base breakdown voltage Test conditions Min Typ Max Unit IC=1mA,IE=0 150 V IC=30mA,IB=0 100 V IE=5mA,IC=0 8 V Collector cut-off current ICBO VCB=100V,IE=0 10 μA Emitter cut-off current IEBO VEB=5V,IC=0 2 mA DC current gain hFE(1)* VCE=2V, IC=1.5A 2K hFE(2)* VCE=2V, IC=3A 1K 20K Collector-emitter saturation voltage * VCE(sat) IC=1.5A,IB=1.5mA 1.2 V Base-emitter saturation voltage * VBE(sat) IC=1.5A,IB=1.5mA 2 V *Pulse test: pulse width ≤300μs, duty cycle≤ 1.5%. CLASSIFICATION OF hFE(1) RANK O Y G RANGE 2K-5K 4K-12K 6K-20K www.cj-elec.com 1 B,Oct,2014 TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Φ www.cj-elec.com Dimensions In Millimeters Min Max 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 2 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 B,Oct,2014