37f605aa8906257b62ecf7c3a249dd2e

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
KSD1692
TRANSISTOR (NPN)
TO – 126
FEATURES
z High DC Current Gain
z Low Collector Saturation Voltage
z High Power Dissipation
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current
3
A
PC
Collector Power Dissipation
1.25
W
Thermal Resistance From Junction To Ambient
100
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
*
VCEO(SUS)
V(BR)EBO
Emitter-base breakdown voltage
Test
conditions
Min
Typ
Max
Unit
IC=1mA,IE=0
150
V
IC=30mA,IB=0
100
V
IE=5mA,IC=0
8
V
Collector cut-off current
ICBO
VCB=100V,IE=0
10
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
2
mA
DC current gain
hFE(1)*
VCE=2V, IC=1.5A
2K
hFE(2)*
VCE=2V, IC=3A
1K
20K
Collector-emitter saturation voltage
*
VCE(sat)
IC=1.5A,IB=1.5mA
1.2
V
Base-emitter saturation voltage
*
VBE(sat)
IC=1.5A,IB=1.5mA
2
V
*Pulse test: pulse width ≤300μs, duty cycle≤ 1.5%.
CLASSIFICATION OF hFE(1)
RANK
O
Y
G
RANGE
2K-5K
4K-12K
6K-20K
www.cj-elec.com
1
B,Oct,2014
TO-126 Package Outline Dimensions
Symbol
A
A1
b
b1
c
D
E
e
e1
h
L
L1
P
Φ
www.cj-elec.com
Dimensions In Millimeters
Min
Max
2.500
2.900
1.100
1.500
0.660
0.860
1.170
1.370
0.450
0.600
7.400
7.800
10.600
11.000
2.290 TYP
4.480
4.680
0.000
0.300
15.300
15.700
2.100
2.300
3.900
4.100
3.000
3.200
2
Dimensions In Inches
Min
Max
0.098
0.114
0.043
0.059
0.026
0.034
0.046
0.054
0.018
0.024
0.291
0.307
0.417
0.433
0.090 TYP
0.176
0.184
0.000
0.012
0.602
0.618
0.083
0.091
0.154
0.161
0.118
0.126
B,Oct,2014