JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC536 TRANSISTOR (NPN) 1. EMITTER FEATURES z General Purpose Amplifier Transistor 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V 0.1 A IC Collector Current PC Collector Power Dissipation 0.4 W Thermal Resistance From Junction To Ambient 312 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V Collector cut-off current ICBO VCB=35V,IE=0 1 μA Emitter cut-off current IEBO VEB=4V,IC=0 1 μA DC current gain hFE VCE=6V, IC=1mA VCE(sat) IC=50mA,IB=5mA Cob VCB=6V, f=1MHz 3.5 pF fT VCE=6V,IC=1mA 100 MHz Collector-emitter saturation voltage Collector output capacitance Transition frequency 60 960 0.5 V CLASSIFICATION OF hFE RANK D E F G H RANGE 60-120 100-200 160-320 280-560 480-960 A,Dec,2010