JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BCX38 TRANSISTOR (NPN) 1.EMITTER FEATURES z High DC Current Gain 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation 625 mW Thermal Resistance From Junction To Ambient 200 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO * Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Test conditions Min Typ Max Unit IC= 0.01mA,IE=0 80 V IC=10mA,IB=0 60 V IE=0.01mA,IC=0 10 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=8V,IC=0 0.1 μA IC=800mA,IB=8mA 1.25 V IC=800mA, VCE=5V 1.8 V VCE=5V, IC=100mA * hFE(1) DC current gain Base-emitter voltage 500 BCX38B 2000 BCX38C 5000 VCE=5V, IC=500mA hFE(2) Collector-emitter saturation voltage BCX38A * VCE(sat) VBE * * BCX38A 1000 BCX38B 4000 BCX38C 10000 *Pulse test A,Dec,2010