2012161352845352

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BCV27
TRANSISTOR (NPN)
SOT–23
FEATURES
 High Collector Current
 High Current Gain
MARKING:FF
1. BASE
2. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
3. COLLECTOR
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current
500
mA
PC
Collector Power Dissipation
300
mW
Thermal Resistance From Junction To Ambient
416
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
10
V
Collector cut-off current
ICBO
VCB=30V, IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=4V, IC=0
0.1
µA
hFE(1)
VCE=1V, IC=100µA
4000
hFE(2)
VCE=5V, IC=10mA
10000
hFE(3)
VCE=5V, IC=100mA
20000
hFE(4)
VCE=5V, IC=0.5A
4000
DC current gain
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB=0.1mA
1
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB=0.1mA
1.5
V
Transition frequency
Collector output capacitance
fT
Cob
VCE=5V,IC=50mA, f=100MHz
170
MHz
VCB=10V, IE=0, f=1MHz
3.5
pF
A,Oct,2010