2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 zExternal dimensions (Unit : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC 5 2 ICP 3 0.5 PC 2 Collector current 2SC4132 Collector power dissipation Junction temperature Storage temperature ∗1 ∗2 ∗3 1 2SD1857 Tj Tstg ∗2 ∗3 2SD1857 6.8 2.5 ∗1 0.65Max. W 0.5 °C °C 150 −55 to +150 4.4 Emitter-base voltage V V V A A 0.9 Unit 120 120 1.0 Limits VCBO VCEO 14.5 Symbol (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 0.4 ROHM : MPT3 EIAJ : SC-62 Collector-base voltage Collector-emitter voltage 1.5 1.5 0.4 (3) zAbsolute maximum ratings (Ta = 25°C) Parameter 4.5 zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236. (1) (2) (3) 2.54 2.54 Single pulse Pw = 10ms When mounted on a 40 × 40 × 0.7mm ceramic board. When mounted on 1.7mm thick PCB having collector foll dimensions 1cm2 or more. 1.05 0.45 Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base zPackaging specifications and hFE Type Package hFE 2SC4132 2SD1857 MPT3 PQR ATV QR T100 1000 − TV2 2500 CB∗ Marking Code Basic ordering unit (pieces) ∗ Denotes hFE zElectrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Parameter BVCBO BVCEO − − − IC = 50µA IC = 1mA − IEBO − VCE(sat) − 2 µA V VEB = 4V Collector-emitter saturation voltage DC current transfer ratio Transition frequency − − − V µA IE = 50µA ICBO − − − 1 V V BVEBO 120 120 5 hFE fT 82 − − − 80 20 390 − − − MHz pF Output capacitance Cob 1 Conditions VCB = 100V IC/IB = 1A/0.1A ∗ VCE/IC = 5V/0.1A VCE = 5V , IE = −0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz ∗ ∗ Measured using pulse current. Rev.A 1/3 2SC4132 / 2SD1857 Transistors zElectrical characteristics curves 10 10mA 9mA 8mA 7mA 6mA 0.4 3mA 2mA 0.2 1mA DC CURRENT GAIN : hFE 5mA 4mA 1 0.5 0.2 0.1 25°C 0.6 0.05 200 50 5V 20 10 5 2 3 4 0 5 DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=5V Ta=100°C 200 25°C 100 −25°C 50 20 10 5 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 2 1 0.5 0.2 10 0.02 0.5 1 2 5 Fig.3 DC current gain vs. collector current ( ) 10 10 EMITTER CURRENT : IE (mA) Fig.7 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) −500 −1000 Fig.5 Collector-emitter saturation voltage vs. collector current IC/IB=10 5 2 Ta= −25°C 1 0.5 VBE(sat) 0.2 25°C 100°C Ta=100°C 0.1 0.05 −25°C 25°C VCE(sat) 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation Base-emitter saturation vs. collector current 5 1000 Ta=25°C f=1MHz IE=0A 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.8 Collector output capacitance vs. collector-base voltage 2 IC Max(PULSE∗) 1 500m 200m 100m s∗ 2 10 m 5 5 s∗ 10 2 00 20 −50 −100 −200 0.05 0.1 0.2 1 =1 50 −5 −10 −20 IC/IB=5V 0.05 0.01 0.01 0.02 0.5 Pw 100 −1 −2 Ta=25°C 5 0.1 0.05 0.1 0.2 COLLECTOR CURRENT : IC (A) 0m =1 TRANSITION FREQUENCY : fT (MHz) ) 200 1 1 0.01 0.02 1.8 COLLECTOR CURRENT : IC (A) Ta=25°C VCE=5V 500 1.4 1.6 Pw 1000 1.2 10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( 1.0 Fig.2 Ground emitter propagation characteristics Fig.1 Ground emitter output characteristics 500 0.8 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1000 0.2 0.4 0.6 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) 1 2 0.01 COLLECTOR CURRENT : IC (A) 0 VCE=10V 100 0.02 IB=0mA 0 Ta=25°C 500 2 0°C −25°C 0.8 1000 VCE=5V 5 Ta=10 Ta=25°C COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 1.0 50m 20m 10m 5m Ta=25°C ∗Single 2m nonrepetitive pulse 1m 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area (2SC4132) Rev.A 2/3 2SC4132 / 2SD1857 Transistors 10 IC Max(PULSE∗) 2 1 0.5 0.2 DC Ta=25°C ∗Single nonrepetitive pulse s∗ 0m =1 Pw s∗ 0m 10 COLLECTOR CURRENT : IC (A) 5 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (2SD1857) Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1