2SB1275 / 2SB1236A Transistors Power Transistor (−160V , −1.5A) 2SB1275 / 2SB1236A zFeatures 1) High breakdown voltage.(BVCEO = −160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. zExternal dimensions (Unit : mm) 1.5 5.5 5.1 6.5 2.3 0.65 C0.5 0.8Min. 0.5 1.0 0.5 2.3 0.9 1.5 2.3 (3) (2) (1) 0.9 0.75 2SB1275 2.5 9.5 zAbsolute maximum ratings (Ta = 25°C) Symbol Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO −160 −160 V V Emitter-base voltage VEBO −5 −1.5 V A(DC) −3 A(Pulse) PC Junction temperature Tj 150 °C Storage temperature Tstg −55∼+150 °C W(Tc=25°C) 10 1 0.65Max. ∗2 W 0.5 4.4 2.5 ∗1 14.5 1 Collector 2SB1275 power dissipation 2SB1236A 6.8 0.9 IC Collector current 2SB1236A 1.0 Parameter (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) ROHM : CPT3 EIAJ : SC-63 (1) (2) (3) 2.54 2.54 1.05 0.45 Taping specifications ∗ 1 Single pulse Pw=100ms ∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. ROHM : ATV (1) Emitter (2) Collector (3) Base zPackaging specifications and hFE Type 2SB1275 2SB1236A Package hFE CPT3 P ATV PQ Code Basic ordering unit (pieces) TL 2500 TV2 2500 zElectrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO −160 − − V Collector-emitter breakdown voltage BVCEO −160 − − V IC = −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE = −50µA Collector cutoff current ICBO − − −1 µA VCB = −120V Emitter cutoff current IEBO − − −1 µA VEB = −4V VCE(sat) − − −2 V 82 − 180 − 82 − 270 − fT − 50 − MHz Cob − 30 − pF Collector-emitter saturation voltage DC current transfer ratio 2SB1275 2SB1236A Transition frequency Output capacitance ∗Measured using pulse current. hFE Conditions IC = −50µA ∗ IC/IB = −1A/−0.1A VCE = −5V , IC = −0.1A VCE = −5V , IE = 0.1A , f = 30MHz VCB = −10V , IE =0A , f = 1MHz Rev.A 1/3 2SB1275 / 2SB1236A Transistors zElectrical characteristics curves −10 Ta=25°C −5mA −4mA −3mA −2mA −1mA IB= 0mA 0 −1 0 −2 −3 −4 −0.2 −0.1 −0.05 −0.02 −0.01 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) DC CURRENT GAIN : hFE 25°C Ta=100°C 100 −25°C 50 20 10 5 2 1 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 VCE= −5V Ta=25°C 100 50 20 10 5 2 2 5 10 20 50 100 200 1 −0.01 −0.02 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −0.05 −0.1 −0.2 −0.5 500 1000 EMITTER CURRENT : IE (mA) Fig.7 Resistance raito vs. emmiter current −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) −10 Ta=25°C −5 −2 −1 −0.5 IC/IB=50 −0.2 20 −0.1 10 −0.05 −0.02 −0.01 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 −10 IC/IB=10 −5 −2 −1 Ta= −25°C −0.5 −0.2 −0.1 −0.05 1000 f=1MHz IE=0A Ta=25°C 500 200 100 50 20 10 5 2 1 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 25°C VBE(sat) 100°C Ta=100°C VCE(sat) −25°C 25°C −0.02 −0.01 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE: Cob (pF) TRANSITION FREQUENCY : fT (MHz) ) 200 1 1 5 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( 500 −5V 10 2 COLLECTOR CURRENT : IC (A) 1000 20 Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE= −10V 500 200 50 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Ground emitter output characteristics 1000 VCE= −10V 100 −50 −100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.8 Collector output capacitance vs. collector-base voltage Fig.6 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage −10 −5 COLLECTOR CURRENT : IC (A) −0.2 −0.5 200 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) −0.4 DC CURRENT GAIN : hFE −6mA −1 −25°C −0.6 −2 25°C PC=1W −10mA −9mA −8mA −7mA Ta=25°C 500 Ta=100 °C −0.8 1000 VCE= −5V −5 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) −1.0 Ic Max. (Pulse∗) Pw=10ms∗ −2 −1 −0.5 100ms∗ −0.2 DC −0.1 −0.05 −0.02 −0.01 −0.005 Ta=25°C ∗ Single NONREPETITIVE −0.002 PULSE −0.001 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area (2SB1236A) Rev.A 2/3 2SB1275 / 2SB1236A Transistors COLLECTOR CURRENT : IC (A) −10 −5 Ic Max. (Pulse∗) Pw=10ms∗ −2 −1 −0.5 −0.2 100ms∗ DC −0.1 −0.05 −0.02 −0.01 −0.005 Ta=25°C ∗ Single NONREPETITIVE −0.002 PULSE −0.001 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (2SB1275) Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1