ROHM 2SD2211

2SD2211 / 2SD1918 / 2SD1857A
Transistors
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
zExternal dimensions (Unit : mm)
2SD2211
4.0
1.0
1.5
0.4
2.5
0.5
(1)
1.6
0.5
3.0
(2)
4.5
zFeatures
1) High breakdown voltage.(BVCEO = 160V)
2) Low collector output capacitance.
(Typ. 20pF at VCB = 10V)
3) High transition frequency.(fT = 80MHZ)
4) Complements the 2SB1275 / 2SB1236A.
1.5
1.5
0.4
(3)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
0.4
ROHM : MPT3
EIAJ : SC-62
zAbsolute maximum ratings (Ta = 25°C)
Symbol
Limits
Unit
VCBO
VCEO
160
160
V
V
VEBO
5
1.5
3
V
A(DC)
A(Pulse)
∗1
1
W
∗2
0.5
2
W
W
∗3
1
10
W
W(Tc=25°C)
PC
2SD1918
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 ∼+150
°C
0.75
0.9
5.1
6.5
2.3
1.5
0.65
0.9
0.8Min.
C0.5
1.5
0.5
2SD2211
5.5
2.3
Collector
power
dissipation
(3) (2) (1)
IC
2SD1857A
2.3
Collector current
2SD1918
1.0
0.5
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
2.5
9.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM : CPT3
EIAJ : SC-63
∗ 1 Pw=200msec duty=1/2
∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
∗ 3 When mounted on a 40 x 40 x 0.7mm ceramic board.
2SD1857A
6.8
1.0
0.65Max.
zPackaging specifications and hFE
0.5
4.4
14.5
0.9
2.5
(1) (2) (3)
Type
2SD2211
2SD1918
2SD1857A
Package
hFE
Marking
MPT3
QR
DQ*
CPT3
QR
ATV
PQ
−
−
T100
1000
TL
2500
TV2
2500
Code
Basic ordering unit (pieces)
2.54 2.54
1.05
0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
* Denotes hFE
zElectrical characteristics (Ta = 25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Parameter
BVCBO
160
−
−
V
IC = 50µA
Collector-emitter breakdown voltage
BVCEO
160
−
−
V
IC = 1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V
IE = 50µA
Collector cutoff current
ICBO
−
−
1
µA
VCB = 120V
Emitter cutoff current
IEBO
−
−
1
µA
VEB = 4V
Collector-emitter saturation voltage
VCE(sat)
−
−
2
V
IC/IB = 1A/0.1A
∗
Base-emitter saturation voltage
VBE(sat)
−
−
1.5
V
IC/IB = 1A/0.1A
∗
120
−
390
−
DC current
2SD2211,2SD1918
transfer ratio
2SD1857A
hFE
82
−
270
−
Transition frequency
fT
−
80
−
MHz
Output capacitance
Cob
−
20
−
pF
Conditions
VCE/IC = 5V/0.1A
VCE = 5V , IE = −0.1A , f = 30MHz
VCB = 10V , IE = 0A , f = 1MHz
∗ Measured using pulse current.
Rev.A
1/3
2SD2211 / 2SD1918 / 2SD1857A
Transistors
zElectrical characteristic curves
COLLECTOR CURRENT : IC (A)
A
10m
COLLECTOR CURRENT : IC (A)
1000
10
Ta=25°C
9mA
8mA
7mA
6mA
0.8
0.6
5mA
4mA
0.4
3mA
2mA
0.2
IB=1mA
500
2
1
Ta=100°C
0.5
Ta=25°C
Ta= −25°C
0.2
0.1
0.05
200
0
1
2
3
4
0.01
5
50
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
5
1
0.01
1.8
50
25°C
−25°C
20
10
5
2
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
Ta=25°C
5
2
1
0.5
0.2
IC/IB=20
0.1
0.05
0.02
0.01
0.01
0.02
1
VBE(sat)
EMITTER CURRENT : IE (mA)
Fig.7 Gain bandwidth products vs. emitter current
10
100°C
0.1
−25°C
0.02
VCE(sat)
0.01
0.01
0.02 0.05
0.1
0.2
0.5
1
Ta=25°C
f=1MHz
IE=0A
500
5
200
100
50
20
10
5
2
1
0.1
0.2
0.5
1
2
5
10
20
5
10
Fig.6 Collector-emitter saturation voltage
vs. collector current
Base-emitter saturation voltage
10
1000
2
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage
vs. collector current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
25°C
0.2
50
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs. collector-base voltage
Ic Max (Pulse∗)
2
1
500m
200m
100m
50m
Ta=25°C
∗Single
nonrepetitive
pulse
s∗
−500 −1000
Ta= −25°C
0.5
s∗
2
−100 −200
2
m
00
5
−50
5
10
IC/IB=10
0m
=1
10
−20
2
5
C
D
20
−10
1
2
Pw
50
−5
0.5
1
5
=1
100
−2
0.2
0.5
Pw
TRANSITION FREQUENCY : fT (MHz)
Ta=25°C
VCE=5V
200
1
−1
0.1
0.2
10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( ΙΙ )
500
0.05
0.1
0.05
10
COLLECTOR CURRENT : IC (A)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
BASE SATURATION VOLTAGE : VBE(sat) (V)
100
10
0.05
Fig.3 DC current gain vs. collector current ( Ι )
COLLECTOR CURRENT : IC (A)
DC CURRENT GAIN : hFE
Ta=100°C
200
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
VCE=5V
0.02
COLLECTOR CURRENT : IC (A)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics
500
5V
20
2
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
1000
VCE=10V
100
0.02
0
Ta=25°C
VCE=5V
5
DC CURRENT GAIN : hFE
1.0
20m
10m
5m
2m
1m Recommended land
0.1 0.2 0.5
2
5
10 20
50 100 200
500 1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area (2SD2211)
Rev.A
2/3
2SD2211 / 2SD1918 / 2SD1857A
Transistors
10
Ta=25°C
∗Single
nonrepetitive
pulse
Ic Max (Pulse∗)
2
=
Pw
m
10
1
s∗
0m
10
C
D
200m
100m
50m
s∗
500m
=
Pw
COLLECTOR CURRENT : IC (A)
5
20m
10m
5m
2m
1m
0.1 0.2
0.5
1
2
5
10 20
50 100 200
500 1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operating area (2SD1918)
Rev.A
3/3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1