SSF3402 30V N-Channel MOSFET D DESCRIPTION The SSF3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. G S Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 48mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●Battery protection ●Load switch ●Power management SOT-23 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity 3402 SSF3402 SOT-23 Ø180mm 8 mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V ID(25℃) 5 A ID(70℃) 4.3 A IDM 20 A PD 1.38 W TJ,TSTG -55 To 150 ℃ R θJA 90 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) www.goodark.com Page 1 of 4 Rev.1.0 SSF3402 30V N-Channel MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 V Zero Gate Voltage Drain Current IDSS V DS=30V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.5 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=4A 45 48 mΩ VGS=10V, ID=5A 26 30 mΩ V DS=5V,ID=5A 13 ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 1 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance 660 V DS=25V,VGS=0V, F=1.0MHz 1050 PF 90 PF Crss 70 PF Turn-on Delay Time td(on) 6 nS Turn-on Rise Time tr 20 nS 20 nS nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) VDS=15V,ID=5A VGS=10V,RGEN=3.3Ω RD=3Ω Turn-Off Fall Time tf 3 Total Gate Charge Qg 8.5 Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=16V,ID=5A,VGS=4.5V 15 nC 1.5 nC 3.2 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.2A 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.0 SSF3402 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr Vdd Rl Vin Vgs Rgen td(on) D Vout 90% VOUT G toff tf td(off) 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2: Switching Waveforms R(t),Normalized Effective Transient Thermal Impedance Figure 1: Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedanc www.goodark.com Page 3 of 4 Rev.1.0 SSF3402 30V N-Channel MOSFET SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter; converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.0