SSF2841 20V Dual P-Channel MOSFET DESCRIPTION The SSF2841 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as -0.7V. This device is suitable for use as a load switch or in PWM applications. Schematic Diagram D1 S1 S1 G1 D2 SSF2841 8205A 5 6 7 8 ● V DS = -20V,ID = -5A R DS(ON) <72mΩ @ V GS=-2.5V R DS(ON) < 50mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product ● Surface Mount Package 4 3 2 1 GENERAL FEATURES S2 S2 G2 Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management TSSOP-8Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF2841 SSF2841 TSSOP-8 － － － ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage V DS Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit Unit -20 V V GS ±12 V ID -5 A IDM -20 A PD 3.2 W TJ,TSTG -55 To 150 ℃ R θJA 83 ℃/W THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) www.goodark.com Page 1 of 4 Rev.1.0 SSF2841 20V Dual P-Channel MOSFET ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS=0V ID=-250μA -20 V Zero Gate Voltage Drain Current IDSS V DS=-20V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 V Drain-Source On-State Resistance RDS(ON) ON CHARACTERISTICS (Note 3) Forward Transconductance g FS -0.4 VGS=-4.5V, ID=-5A 41 50 VGS=-2.5V, ID=-3A 67 72 VDS=-10V,ID=-5A 9 S 610 PF 130 PF mΩ DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss V DS=-10V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance C rss 100 PF Turn-on Delay Time td(on) 27 nS Turn-on Rise Time tr 60 nS 30 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) VDD=-10V,ID=-5A VGS=-4.5V,RGEN=1Ω Turn-Off Fall Time tf 10 nS Total Gate Charge Qg 9.6 nC Gate-Source Charge Q gs 1.5 nC Gate-Drain Charge Q gd 2.4 nC V DS=-10V,ID=-5A,VGS=-4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD VGS=0V,IS=-1.7A -1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testin www.goodark.com Page 2 of 4 Rev.1.0 SSF2841 20V Dual P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms R(t),Normalized Effective Transient Thermal Impedance Figure1:Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.0 SSF2841 20V Dual P-Channel MOSFET TSSOP-8 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.0