SSF2449

SSF2449
20V P-Channel MOSFET
D
DESCRIPTION
The SSF2449 uses advanced trench technology to
provide excellent R DS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch or in PWM applications.
G
S
Schematic Diagram
GENERAL FEATURES
● V DS = -20V,ID = -5A
R DS(ON) < 100mΩ @ V GS=-2.5V
R DS(ON) < 60mΩ @ VGS=-4.5V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Pin Assignment
APPLICATIONS
●PWM applications
●Load switch
●Power management
TSOP-6 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
2449
SSF2449
TSOP-6
－
－
－
ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V DS
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Limit
Unit
-20
V
V GS
±12
V
ID
-5
A
IDM
-20
A
PD
1.2
W
TJ,TSTG
-55 To 150
℃
R θJA
110
℃/W
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
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Page 1 of 4
Rev.1.0
SSF2449
20V P-Channel MOSFET
ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV DSS
VGS=0V ID=-250μA
-20
V
Zero Gate Voltage Drain Current
IDSS
V DS=-20V,VGS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1
V
Drain-Source On-State Resistance
RDS(ON)
ON CHARACTERISTICS (Note 3)
Forward Transconductance
g FS
-0.6
VGS=-4.5V, ID=-5A
49
60
VGS=-2.5V, ID=-3A
83
100
VDS=-10V,ID=-5A
9
S
610
PF
130
PF
mΩ
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
C lss
V DS=-10V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
C rss
100
PF
Turn-on Delay Time
td(on)
27
nS
Turn-on Rise Time
tr
60
nS
30
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
td(off)
VDD=-10V,ID=-5A
VGS=-4.5V,RGEN=1Ω
Turn-Off Fall Time
tf
10
nS
Total Gate Charge
Qg
9.6
nC
Gate-Source Charge
Q gs
1.5
nC
Gate-Drain Charge
Q gd
2.4
nC
V DS=-10V,ID=-5A,VGS=-4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
V SD
VGS=0V,IS=-1.7A
-1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 4
Rev.1.0
SSF2449
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Vgs
Rgen
td(on)
Rl
Vin
D
ton
tr
Vout
90%
VOUT
G
toff
tf
td(off)
90%
INVERTED
10%
10%
S
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
R(t),Normalized Effective
Transient Thermal Impedance
Figure1:Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
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Page 3 of 4
Rev.1.0
SSF2449
20V P-Channel MOSFET
TSOP-6 PACKAGE INFORMATION
Millimeters
SYMBOL
A
MIN
MAX
0.90
1.10
A1
0.10
b
0.30
0.50
c
0.08
0.20
D
2.70
3.10
E
2.60
3.00
E1
1.40
1.80
e
L
0.95 BSC
0.35
0.55
NOTES：
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 4 of 4
Rev.1.0