SSF3639C 30V Complementary MOSFET DESCRIPTION The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. N-channel P-channel Schematic Diagram GENERAL FEATURES ●N-Channel VDS = 30V,ID = 6.3A RDS(ON) < 35.5mΩ @ VGS=4.5V RDS(ON) < 22mΩ @ VGS=10V ●P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V Marking and Pin Assignment ●High Power and current handing capability ●Lead free product ●Surface Mount Package SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 3639C SSF3639C SOP-8 Ø330mm ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Tape Width Quantity 12mm 2500 units N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V 6.3 -5 20 -20 1.6 2.0 -55 To 150 -55 To 150 N-Ch 62.5 P-Ch 62.5 Continuous Drain Current TA=25℃ ID TA=70℃ Pulsed Drain Current (Note 1) Maximum Power Dissipation IDM TA=25℃ PD TA=70℃ Operating Junction and Storage Temperature Range TJ,TSTG A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note2) RθJA ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS www.goodark.com Page 1 of 4 Min Typ ℃/W Max Unit Rev.1.1 SSF3639C 30V Complementary MOSFET Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VGS=0V ID=250μA N-Ch 30 VGS=0V ID=-250μA P-Ch -30 VDS=24V,VGS=0V N-Ch 1 VDS=-24V,VGS=0V P-Ch -1 N-Ch ±100 P-Ch ±100 VGS=±20V,VDS=0V V μA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance VGS(th) RDS(ON) gFS VDS=VGS,ID=250μA N-Ch 1 1.9 3 VDS=VGS,ID=-250μA P-Ch -1 -1.8 -3 VGS=10V, ID=6.3A N-Ch 19 22 VGS=-10V, ID=-5.0A P-Ch 39 52 VGS=4.5V, ID=5.5A N-Ch 25 35.5 VGS=-4.5V, ID=-4A P-Ch 62 87 VDS=10V,ID=6.3A N-Ch 10 VDS=-5V,ID=-5A P-Ch 8 N-Ch 620 P-Ch 700 N-Ch 118 P-Ch 120 N-Ch 85 P-Ch 75 N-Ch 8 P-Ch 9 N-Ch 4 P-Ch 5 N-Ch 22 P-Ch 30 N-Ch 4 P-Ch 15 N-Ch 10 P-Ch 14.7 N-Ch 2 P-Ch 2 N-Ch 2 P-Ch 3.8 V mΩ S DYNAMIC PARAMETERS Input Capacitance Clss N-Ch VGS=0V, VDS=15V, f=1MHz Output Capacitance Coss P-Ch VGS=0V, VDS=-15V, f=1MHz Reverse Transfer Capacitance Crss pF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge www.goodark.com Qgd N-Ch VDS=15V, VGS=10V,RGEN=6Ω,ID=1A P-Ch VDD=-15V, ID=-1A, VGS=-10V,RGEN=6Ω N-Ch VDS=15V,ID=6.3A, VGS=10V P-Ch VDS=-15V,ID=-5A, VGS=-10V Page 2 of 4 nS nS nS nS nC nC nC Rev.1.1 SSF3639C 30V Complementary MOSFET DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.3A N-Ch 0.8 1.2 V VGS=0V,IS=-1A P-Ch -0.8 -1 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 3 of 4 Rev.1.1 SSF3639C 30V Complementary MOSFET SOP-8 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) NOTES: 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane.CT 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact www.goodark.com Page 4 of 4 Rev.1.1