SSF2318E 20V N-Channel MOSFET DESCRIPTION The SSF2318E uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID =6.5A RDS(ON) < 34mΩ @ VGS=1.8V RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V Schematic Diagram ESD Rating：2000V HBM ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●Battery protection ●Load switch ●Power management SOT-23 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity 2318E SSF2318E SOT-23 Ø330mm 12mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V ID 6.5 A IDM 30 A PD 1.4 W TJ,TSTG -55 To 150 ℃ R θJA 90 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) www.goodark.com Page 1 of 4 Rev.1.0 SSF2318E 20V N-Channel MOSFET ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±4.5V,VDS=0V ±1 uA VGS=±8V,V DS=0V ±10 uA 0.6 1 V VGS=4.5V, ID=6.5A 18 22 mΩ VGS=2.5V, ID=5.5A 21 26 mΩ VGS=1.8V, ID=5A 26 34 mΩ V DS=5V,ID=6.5A 7 S 1160 PF 200 PF ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance VGS(th) VDS=VGS,ID=250μA RDS(ON) gFS 0.4 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=10V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 140 PF Turn-on Delay Time td(on) 6.5 nS Turn-on Rise Time tr 13 nS 50 nS 30 nS 10 nC 2.3 nC 3 nC SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time VDD=10V,ID=1A VGS=5V,RGEN=3Ω td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=10V,ID=6.5A, VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1A 0.76 1 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.0 V SSF2318E 20V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS td(on) Vdd Vgs Rgen D toff tf td(off) 90% Rl Vin ton tr Vout VOUT 90% INVERTED 10% 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 2: Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 1:Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.0 SSF2318E 20V N-Channel MOSFET SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact www.goodark.com Page 4 of 4 Rev.1.0