SSF2429 20V P-Channel MOSFET DESCRIPTION D The SSF2429 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. G GENERAL FEATURES S ● VDS = -20V,ID =-5A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-2.5V Schematic Diagram ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●Battery protection ●Load switch ●Power management SOT23-6 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity 2429 SSF2429 SOT23-6 Ø180mm 8mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ±12 V ID -5 A IDM -20 A PD 1.4 W TJ,TSTG -55 To 150 ℃ R θJA 90 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) www.goodark.com Page 1 of 4 Rev.1.0 SSF2429 20V P-Channel MOSFET ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -20 V Zero Gate Voltage Drain Current IDSS VDS=-20V,V GS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.7 -1 V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-5A 29 35 mΩ VGS=-2.5V, ID=-3A 37 48 mΩ ON CHARACTERISTICS (Note 3) Forward Transconductance gFS V DS=-10V,ID=-3A -0.5 4 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=-10V,V GS=0V, F=1.0MHz 1450 PF 200 PF Output Capacitance Coss Reverse Transfer Capacitance Crss 160 PF Turn-on Delay Time td(on) 5 nS Turn-on Rise Time tr 13 nS 80 nS 35 nS 17 nC 4 nC 4.5 nC SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD=-10V,ID=-1A VGS=-4.5V,R GEN=6Ω VDS=-10V,ID=-4.5A, VGS=-5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1.3A -1.3 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.0 V SSF2429 20V P-Channel MOSFET ELECTRICAL AND THERMAL CHARACTERISTICS Vdd ton tr td(on) Rl Vin Vgs Rgen toff tf td(off) D Vout 90% VOUT 90% INVERTED 10% 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 1:Switching Test Circuit R(t),Normalized Effective Transient Thermal Impedance Figure 2:Switching Waveforms Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.0 SSF2429 20V P-Channel MOSFET SOT23-6 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.0