SSF2314 20V N-Channel MOSFET D DESCRIPTION The SSF2314 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application. G S Schematic Diagram GENERAL FEATURES ● V DS = 20V,ID = 4.5A R DS(ON) < 40mΩ @ VGS=2.5V R DS(ON) < 33mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●Battery protection ●Load switch ●Power management SOT-23 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity 2314 SSF2314 SOT-23 Ø180mm 8 mm 3000 units ABSOLUTE MAXIMUM RATINGS(T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±8 V ID 4.5 A IDM 13.5 A PD 1.25 W TJ,TSTG -55 To 150 ℃ R θJA 100 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) www.goodark.com Page 1 of 4 Rev.1.0 SSF2314 20V N-Channel MOSFET ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 V Zero Gate Voltage Drain Current IDSS V DS=20V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.65 1.2 V Drain-Source On-State Resistance RDS(ON) VGS=2.5V, ID=4.5A 33 40 mΩ VGS=4.5V, ID=5A 27 33 mΩ VDS=10V,ID=5A 10 S 500 PF 300 PF PF ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 0.5 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=8V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 140 Turn-on Delay Time td(on) 20 40 nS Turn-on Rise Time tr 18 40 nS 60 108 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω Turn-Off Fall Time tf 28 56 nS Total Gate Charge Qg 10 15 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=10V,ID=5A,VGS=4.5V 2.3 nC 2.9 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=1A 1.2 V 1 A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.0 SSF2314 20V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Rl Vin Vgs Rgen D Vout G S Figure 2:Switching Waveforms Normalized Effective Transient Thermal Impedance Figure 1: Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.0 SSF2314 20V N-Channel MOSFET SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.0