SSF2418EB 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418EB uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch. It is ESD protected. GENERAL FEATURES Schematic Diagram ● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4.0V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating：2500V HBM Marking and Pin Assignment ● High Power and current handling capability ● Lead free product ● Surface Mount Package APPLICATIONS ●Battery protection ●Load switch ●Power management SOT23-6 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity 2418EB SSF2418EB SOT23-6 Ø330mm 12mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±12 V ID 6 A IDM 30 A PD 1.3 W TJ,TSTG -55 To 150 ℃ R θJA 95 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) www.goodark.com Page 1 of 4 Rev.1.2 SSF2418EB 20V Dual N-Channel MOSFET ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V ±10 uA VGS(th) VDS=VGS,ID=250μA 1 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(ON) gFS 0.5 VGS=4.5V, ID=6A 18 21 mΩ VGS=4.0V, ID=5.5A 19 22 mΩ VGS=3.1V, ID=5A 21 26 mΩ VGS=2.5V, ID=4A 25 30 mΩ VDS=5V,ID=6A 7 S 650 PF 170 PF DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=10V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 150 PF Turn-on Delay Time td(on) 20 nS Turn-on Rise Time tr 50 nS 64 nS 40 nS 8 nC 1.5 nC 2 nC SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD=10V,ID=1A VGS=4.5V,RGEN=10Ω V DS=10V,ID=6A, VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1A 0.76 1.1 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.2 V SSF2418EB 20V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Rl Vin Vgs Rgen D Vout G S Figure 2: Switching Waveform r(t),Normalized Effective Transient Thermal Impedance Figure 1: Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.2 SSF2418EB 20V Dual N-Channel MOSFET SOT23-6 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.2