SSF9926 20V Dual N-Channel MOSFET DESCRIPTION The SSF9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic Diagram GENERAL FEATURES ● VDS = 20V,ID =6A RDS(ON) < 44mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF9926 SSF9926 SOP-8 Ø330mm 12mm 2500 units ABSOLUTE MAXIMUM RATINGS(T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±10 V ID 6 A IDM 24 A PD 2 W TJ,TSTG -55 To 150 ℃ R θJA 62.5 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) www.goodark.com Page 1 of 4 Rev.1.1 SSF9926 20V Dual N-Channel MOSFET ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS=0V ID=250μA 20 V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±10V,V DS=0V ±100 nA Gate Threshold Voltage VGS(th) V DS=VGS,ID=250μA 0.75 1 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=6A 22.5 28 mΩ VGS=2.5V, ID=5.2A 32 44 mΩ VDS=5V,ID=4.5A 18 S 550 PF 140 PF ON CHARACTERISTICS (Note 3) Forward Transconductance g FS 0.6 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss VDS=8V,VGS=0V, F=1.0MHz Output Capacitance C oss Reverse Transfer Capacitance C rss 120 PF Turn-on Delay Time td(on) 9.6 nS Turn-on Rise Time tr 6.5 nS 28 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) VDS=10V,VGS=4.5V,RGEN=6Ω ID=1A Turn-Off Fall Time tf 6 nS Total Gate Charge Qg 6 nC Gate-Source Charge Qgs 1.5 nC Gate-Drain Charge Q gd 1.5 nC VDS=10V,ID=3A,VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD VGS=0V,IS=1.7A 1 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.1 SSF9926 20V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen td(on) Rl Vin D ton tr Vout 90% VOUT G toff tf td(off) 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 1: Switching Test Circuit Z thJA Normalized Transient Thermal Resistance Figure 2: Switching Waveforms Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.1 SSF9926 20V Dual N-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter; converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.1