SSF6646 60V Dual N-Channel MOSFET DESCRIPTION The SSF6646 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. Schematic Diagram GENERAL FEATURES ● VDS = 60V,ID =4.5A RDS(ON) <75mΩ @ VGS=4.5V RDS(ON) <60mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management SOP-8 Top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF6646 SSF6646 SOP-8 Ø330mm 12mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±20 V ID(25℃) 5 A ID(70℃) 4.3 A IDM 25 A PD 2.4 W TJ,TSTG -55 To 175 ℃ R θJA 62.5 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage www.goodark.com BVDSS VGS=0V ID=250μA Page 1 of 4 60 V Rev.1.1 SSF6646 60V Dual N-Channel MOSFET Zero Gate Voltage Drain Current IDSS VDS=48V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) V DS=VGS,ID=250μA 3 V Drain-Source On-State Resistance RDS(ON) ON CHARACTERISTICS (Note 3) Forward Transconductance 1 VGS=4.5V, ID=3A 50 75 mΩ VGS=10V, ID=4.5A 44 60 mΩ g FS VDS=5V,ID=4.5A 5 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss V DS=25V,VGS=0V, F=1.0MHz 700 PF 100 PF Output Capacitance C oss Reverse Transfer Capacitance C rss 50 PF Turn-on Delay Time td(on) 13 nS Turn-on Rise Time tr 10 nS 30 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time VDS=30V,VGS=10V,RGEN=3Ω ID=4.5A td(off) Turn-Off Fall Time tf 6 nS Total Gate Charge Qg 15 nC Gate-Source Charge Qgs 2 nC Gate-Drain Charge Qgd 4 nC V DS=48V,ID=4.5A,VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD VGS=0V,IS=1.7A 0.8 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.1 SSF6646 60V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen D toff tf td(off) 90% Rl Vin ton tr td(on) Vout VOUT 90% INVERTED 10% 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 1:Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.1 SSF6646 60V Dual N-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.1