SSF2418EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. GENERAL FEATURES Schematic Diagram ● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4.0V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating：2000V HBM Marking and Pin Assignment ● High Power and current handing capability ● Lead free product ● Surface Mount Package APPLICATIONS ●Battery protection ●Load switch ●Power management SOT23-6 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity 2418E SSF2418EBK SOT23-6 Ø330mm 12mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±12 V ID 6 A IDM 30 A PD 1.3 W TJ,TSTG -55 To 150 ℃ R θJA 95 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage www.goodark.com BVDSS Page 1 of 4 VGS=0V ID=250μA 20 V Rev.1.0 SSF2418EBK 20V Dual N-Channel MOSFET Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V ±10 uA VGS(th) VDS=VGS,ID=250μA 1 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(ON) gFS 0.5 VGS=4.5V, ID=6A 18 21 mΩ VGS=4.0V, ID=5.5A 19 22 mΩ VGS=3.1V, ID=5A 21 26 mΩ VGS=2.5V, ID=4A 25 30 mΩ VDS=5V,ID=6A 7 S 650 PF 170 PF DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=10V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 150 PF Turn-on Delay Time td(on) 20 nS Turn-on Rise Time tr 50 nS 64 nS 40 nS 8 nC 1.5 nC 2 nC SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD=10V,ID=1A VGS=4.5V,RGEN=10Ω V DS=10V,ID=6A, VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1A 0.76 1 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.0 V SSF2418EBK 20V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen D toff tf td(off) 90% Rl Vin ton tr td(on) Vout VOUT 90% INVERTED 10% 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 1:Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.0 SSF2418EBK 20V Dual N-Channel MOSFET SOT23-6 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.0