ROHM RB075B40S

Data Sheet
Schottky barrier diode
RB075B40S
Dimensions(Unit : mm)
Land size figure (Unit : mm)
6.0
Features
1)Power mold type.(CPD)
2)Low IR
1.6
3.0
1.6
2.0
6.0
Applications
General rectification
3)High reliability
CPD
Construction
Silicon epitaxial planar
2.3 2.3
Structure
(2)
(1)
(3)
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
Reverse voltage (repetitive peak)
VRM
Reverse voltage (DC)
VR
Average rectified forward current(*1)
Io
Forward current surge peak (60Hz / 1cyc)
IFSM
Junction temperature
Tj
Storage temperature
Tstg
(*1)Business frequencies,Rating of R-load,Tc=125C MAX
Electrical characteristic(Ta=25C)
Parameter
Unit
V
V
A
A
C
C
40
40
5
45
150
40 to 150
Forward voltage
Symbol
VF
Min.
-
Typ.
-
Max.
0.75
Unit
V
Reverse current
IR
-
-
5.0
A
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1/3
Conditions
IF=5.0A
VR=40V
2011.04 - Rev.A
Data Sheet
RB075B40S
Electrical characteristic curves
Ta=75C
Ta=25C
Ta=25C
0.1
f=1MHz
Ta=75C
10000
1000
Ta=25C
100
10
Ta=-25C
1
1000
100
0.1
0
100
200
300
400
500
600
0
700
5
10
15
20
25
10
30
0
680
670
AVE:675.8mV
660
800
700
600
500
400
AVE:89.7nA
300
200
600
590
580
AVE:586.9pF
570
560
550
Ct DISPERSION MAP
8.3ms
AVE:130.0A
50
0
1000
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
PEAK SURGE
FORWARD CURRENT : I FSM(A)
1cyc
Ifsm
REVERSE RECOVERY TIME : trr(ns)
30
150
100
610
IR DISPERSION MAP
300
200
620
0
VF DISPERSION MAP
250
Ta=25C
f=1MHz
VR=0V
n=10pcs
630
100
650
15
AVE:15.2ns
10
5
Ifsm
8.3ms
100
1
trr DISPERSION MAP
100
10
1
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
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100
15
D=1/2
Rth(j-a)
Rth(j-c)
10
FORWARD POWER
DISSIPATION : Pf(W)
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
t
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
Ifsm
8.3ms
1cyc
10
0
IFSM DISPERSION MAP
1000
30
640
CAPACITANCE
BETWEEN TERMINALS : Ct(pF)
690
Ta=25C
VR=40V
n=30pcs
900
REVERSE CURRENT : IR(A)
Ta=25C
IF=5A
n=30pcs
20
650
1000
700
10
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
FORWARD VOLTAGE : V F(mV)
10000
CAPACITANCE
BETWEEN TERMINALS : Ct(pF)
Ta=125C
1
0.01
PEAK SURGE
FORWARD CURRENT : I FSM(A)
Ta=125C
100000
Ta=150C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT : I F(A)
Ta=150C
1000000
10
Mounted on epoxy board
IM=100mA
1
1ms
IF=1A
DC
10
Sin(=180)
5
tim
300s
0.1
0.001
0.01
0.1
1
10
TIME : t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
0
5
10
15
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
20
2011.04 - Rev.A
20
20
Sin(=180)
0.02
D=1/2
DC
0.01
0
Io
0A
0V
15
VR
t
D=1/2
DC
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
0.03
REVERSE POWER
DISSIPATION : PR (W)
Data Sheet
RB075B40S
T
D=t/T
VR=20V
Tj=150C
10
5
Sin(=180)
10
20
30
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
0A
Io
0V
VR
t
T
DC
D=t/T
VR=20V
Tj=150C
10
D=1/2
5
Sin(=180)
0
0
0
15
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
3/3
150
0
25
50
75
100
125
150
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
2011.04 - Rev.A
Notice
Notes
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R1120A