AOSMD AO5600EL

AO5600E
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AO5600E/L uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be used
in H-bridge, Inverters and other
applications.AO5600E and AO5600EL are electrically
identical.
n-channel
VDS (V) = 20V,
RDS(ON)< 0.65Ω
RDS(ON)< 0.75Ω
RDS(ON)< 0.95Ω
p-channel
VDS (V) = -20V,
RDS(ON)< 0.8Ω
RDS(ON)< 1.0Ω
RDS(ON)< 1.3Ω
-RoHS compliant
-AO5600EL is Halogen Free
ESD PROTECTED!
S1
ID = 0.6A (VGS=4.5V)
(VGS= 4.5V)
(VGS= 2.5V)
(VGS= 1.8V)
ID = -0.5A (VGS=-4.5V)
(VGS= -4.5V)
(VGS= -2.5V)
(VGS= -1.8V)
D1
1
SC-89-6
D2
G1
D2
G1
D1
G2
G2
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
20
VDS
Gate-Source Voltage
TC=25°C
Pulsed Drain Current
Power Dissipation
TC=100°C
B
ID
IDM
TC=25°C
TC=100°C
Junction and Storage Temperature Range
PD
TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
A
t ≤ 10s
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Ambient A
C
Steady-State
Maximum Junction-to-Lead
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
Max p-channel
-20
0.6
-0.5
0.4
-0.38
3
-1
0.38
0.38
0.24
0.24
A
W
-55 to 150
Symbol
RθJA
RθJL
RθJA
RθJL
Units
V
V
±8
VGS
Continuous Drain
B,H
Current
S2
°C
Device
n-ch
n-ch
n-ch
Typ
275
360
300
Max
330
450
350
Units
°C/W
°C/W
°C/W
p-ch
p-ch
p-ch
275
360
300
330
450
350
°C/W
°C/W
°C/W
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AO5600E
N-channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.45
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
3
TJ=55°C
5
µA
±100
µA
0.6
1
V
0.54
0.65
0.81
1
VGS=2.5V, ID=0.5A
0.63
0.75
Ω
VGS=1.8V, ID=0.3A
0.73
0.95
Ω
1
V
0.4
A
45
pF
VDS=0V, VGS=±8V
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=0.5A
1.5
VSD
Diode Forward Voltage
IS=0.1A,VGS=0V
Maximum Body-Diode Continuous Current
0.65
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
µΑ
±1
VDS=0V, VGS=±4.5V
VGS=4.5V, ID=0.5A
IS
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
VDS=20V, VGS=0V
IDSS
RDS(ON)
Typ
35
VGS=0V, VDS=10V, f=1MHz
S
8
pF
6
pF
0.63
VGS=4.5V, VDS=10V, ID=0.5A
Ω
1
nC
0.08
nC
Qgd
Gate Drain Charge
0.16
nC
tD(on)
Turn-On DelayTime
4.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=5V, VDS=10V, RL=50Ω,
RGEN=3Ω
3.3
ns
70
ns
35
trr
Body Diode Reverse Recovery Time
IF=0.5A, dI/dt=100A/µs
8
Qrr
Body Diode Reverse Recovery Charge IF=0.5A, dI/dt=100A/µs
2
ns
10
ns
nC
A: The
The value
value of
of R
R θJA is
is measured
measured with
with the
the device
device mounted
in a still air
with Twith
The power
dissipation
PDSM and
current
rating The
I DSM are
A =25°C.
A:
onenvironment
1in 2 FR-4 board
2oz. Copper,
in a still
air environment
with
T A =25°C.
θJA
=150°C,
usingdepends
the steady
junction-to-ambient
basedinonany
TJ(MAX)
value
given
application
onstate
the user's
specific board thermal
design. resistance.
The current rating is based on the t ≤ 10s thermal resistance
B. The power dissipation PD is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
rating.
dissipation
limit
for cases
additional
heatsinking
is used.
B:
Repetitive
rating,
pulse where
width limited
by junction
temperature.
=175°C.
C: The
Repetitive
pulse
width
limited
by junctionfrom
temperature
C.
R θJA israting,
the sum
of the
thermal
impedence
junction toT J(MAX)
lead R
θJL and lead to ambient.
the sum of theinthermal
from
case <300
R θJC and
case toduty
ambient.
D. The
The static
RθJA ischaracteristics
D.
Figuresimpedence
1 to 6,12,14
arejunction
obtainedtousing
µs pulses,
cycle 0.5% max.
E. These
The static
Figures
1 to 6 are
obtained
<300 board
µs pulses,
duty Copper,
cycle 0.5%
with 2oz.
in amax.
still air environment with T A=25°C. The SOA
E.
testscharacteristics
are performedinwith
the device
mounted
on 1using
in 2 FR-4
F. These
curvesa are
based
onrating.
the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
curve
provides
single
pulse
a maximum
junction
temperature
T J(MAX)
The SOA curve provides a single pulse rating.
F.
The maximum
current
rating is of
limited
by=175°C.
bond-wires
2
G. These
Rev5:
Oct tests
2008are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. The maximum current rating is limited by bond-wires.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO5600E
N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2
3
4.5V
VDS=5V
2.5V
3.5V
1.5
2
2V
ID(A)
ID (A)
25°C
1
125°C
1.5V
1
0.5
VGS=1V
0
0
0
1
2
3
4
0
0.5
1
1.5
2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
1.8
RDS(ON) (Ω )
0.7
Normalized On-Resistance
0.8
VGS=1.8V
0.6
VGS=2.5V
VGS=4.5V
0.5
0.4
VGS=4.5V
ID=0.5A
1.6
1.4
VGS=1.8V
ID=0.3A
1.2
VGS=2.5V
ID=0.5A
1
0.8
0.6
0
0.2
0.4
0.6
0.8
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.2
1.0E+00
ID=0.5A
1.0E-01
125°C
1
125°C
IS (A)
RDS(ON) (Ω )
1.0E-02
0.8
25°C
1.0E-03
1.0E-04
25°C
0.6
1.0E-05
1.0E-06
0.4
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO5600E
N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
5
VDS=10V
ID=0.5A
Capacitance (pF)
VGS (Volts)
4
3
2
40
Ciss
20
Coss
1
0
Crss
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
10.0
14
10µs
TJ(Max)=150°C
TA=25°C
12
10
RDS(ON)
limited
1.0
100µs
1ms
DC
0.1
0.1s
TJ(Max)=150°C
TA=25°C
0.0
0.01
0.1
1
VDS (Volts)
Power (W)
ID (Amps)
10µs
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=330°C/W
8
6
10ms
4
1s
10s
2
10
0
0.0001
100
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
20
VDS (Volts)
Figure 8: Capacitance Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AO5600E
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-20
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-1
TJ=55°C
VDS=0V, VGS=±8V
±10
µA
1.1
VGS=-2.5V, ID=-0.5A
0.85
1
Ω
VGS=-1.8V, ID=-0.3A
1.05
1.3
Ω
VDS=-5V, ID=-0.51A
0.9
Diode Forward Voltage
IS=-0.1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Turn-Off DelayTime
A
0.9
VSD
tD(off)
-0.45
0.8
Forward Transconductance
SWITCHING PARAMETERS
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
-0.6
0.65
TJ=125°C
gFS
Reverse Transfer Capacitance
µΑ
µA
Static Drain-Source On-Resistance
Crss
5
±1
RDS(ON)
Output Capacitance
Units
VDS=0V, VGS=±4.5V
VGS=-4.5V, ID=-0.5A
Coss
Max
V
VDS=-20V, VGS=0V
IDSS
IS
Typ
-0.66
72
VGS=0V, VDS=-10V, f=1MHz
VGS=-4.5V, VDS=-10V, RL=50Ω,
RGEN=3Ω
Ω
S
-1
V
-0.5
A
100
pF
17
pF
9
pF
60.5
ns
150
ns
612
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-0.5A, dI/dt=100A/µs
27
Qrr
Body Diode Reverse Recovery Charge IF=-0.5A, dI/dt=100A/µs
8.3
436
ns
35
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The maximum current rating is limited by bond-wires
Rev5: Oct 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO5600E
P-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3
5
-6V
VDS=-5V
-4.5V
4
25°C
-4V
2
-3.5V
3
-ID(A)
-ID (A)
-10V
-3V
2
125°C
1
-2.5V
1
VGS=-2.0V
0
0
0
1
2
3
4
5
0
1
1.4
3
4
5
Normalized On-Resistance
1.6
1.2
RDS(ON) (Ω )
2
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Figure 1: On-Region Characteristics
VGS=-1.8V
1
0.8
VGS=-2.5V
0.6
VGS=-4.5V
0.4
VGS=-1.8V
1.4
1.2
VGS=-2.5V
VGS=-4.5V
1
0.8
0
0.2
0.4
0.6
0.8
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+00
1.3
ID=-0.5A
1.0E-01
125°C
1.0E-02
125°C
0.9
-IS (A)
RDS(ON) (Ω )
1.1
25°C
1.0E-03
0.7
1.0E-04
25°C
0.5
1.0E-05
0.3
1.0E-06
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.4
0.8
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO5600E
P-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
5
VDS=-10V
ID=-0.5A
Ciss
80
Capacitance (pF)
-VGS (Volts)
4
3
2
1
60
40
Coss
0
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
14
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
12
10
1.00
Power (W)
-ID (Amps)
10.00
100µs
0.10
RDS(ON)
limited
1ms
10ms
1s
10s
1
10
0
0.0001
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=330°C/W
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
10
6
2
0.01
0.1
8
4
0.1s
DC
Zθ JA Normalized Transient
Thermal Resistance
Crss
20
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AO5600E
G ate C harge Test C ircuit & W aveform
V gs
Qg
10V
+
+ V ds
VD C
-
Q gs
Q gd
VD C
-
DUT
V gs
Ig
C harge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
Vgs
10%
Vgs
td(on)
tr
td(off)
ton
tf
t off
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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AO5600E
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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