AO5600E Complementary Enhancement Mode Field Effect Transistor General Description Features The AO5600E/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.AO5600E and AO5600EL are electrically identical. n-channel VDS (V) = 20V, RDS(ON)< 0.65Ω RDS(ON)< 0.75Ω RDS(ON)< 0.95Ω p-channel VDS (V) = -20V, RDS(ON)< 0.8Ω RDS(ON)< 1.0Ω RDS(ON)< 1.3Ω -RoHS compliant -AO5600EL is Halogen Free ESD PROTECTED! S1 ID = 0.6A (VGS=4.5V) (VGS= 4.5V) (VGS= 2.5V) (VGS= 1.8V) ID = -0.5A (VGS=-4.5V) (VGS= -4.5V) (VGS= -2.5V) (VGS= -1.8V) D1 1 SC-89-6 D2 G1 D2 G1 D1 G2 G2 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage 20 VDS Gate-Source Voltage TC=25°C Pulsed Drain Current Power Dissipation TC=100°C B ID IDM TC=25°C TC=100°C Junction and Storage Temperature Range PD TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Max p-channel -20 0.6 -0.5 0.4 -0.38 3 -1 0.38 0.38 0.24 0.24 A W -55 to 150 Symbol RθJA RθJL RθJA RθJL Units V V ±8 VGS Continuous Drain B,H Current S2 °C Device n-ch n-ch n-ch Typ 275 360 300 Max 330 450 350 Units °C/W °C/W °C/W p-ch p-ch p-ch 275 360 300 330 450 350 °C/W °C/W °C/W www.aosmd.com AO5600E N-channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.45 ID(ON) On state drain current VGS=4.5V, VDS=5V 3 TJ=55°C 5 µA ±100 µA 0.6 1 V 0.54 0.65 0.81 1 VGS=2.5V, ID=0.5A 0.63 0.75 Ω VGS=1.8V, ID=0.3A 0.73 0.95 Ω 1 V 0.4 A 45 pF VDS=0V, VGS=±8V TJ=125°C A gFS Forward Transconductance VDS=5V, ID=0.5A 1.5 VSD Diode Forward Voltage IS=0.1A,VGS=0V Maximum Body-Diode Continuous Current 0.65 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge µΑ ±1 VDS=0V, VGS=±4.5V VGS=4.5V, ID=0.5A IS Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 VDS=20V, VGS=0V IDSS RDS(ON) Typ 35 VGS=0V, VDS=10V, f=1MHz S 8 pF 6 pF 0.63 VGS=4.5V, VDS=10V, ID=0.5A Ω 1 nC 0.08 nC Qgd Gate Drain Charge 0.16 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=5V, VDS=10V, RL=50Ω, RGEN=3Ω 3.3 ns 70 ns 35 trr Body Diode Reverse Recovery Time IF=0.5A, dI/dt=100A/µs 8 Qrr Body Diode Reverse Recovery Charge IF=0.5A, dI/dt=100A/µs 2 ns 10 ns nC A: The The value value of of R R θJA is is measured measured with with the the device device mounted in a still air with Twith The power dissipation PDSM and current rating The I DSM are A =25°C. A: onenvironment 1in 2 FR-4 board 2oz. Copper, in a still air environment with T A =25°C. θJA =150°C, usingdepends the steady junction-to-ambient basedinonany TJ(MAX) value given application onstate the user's specific board thermal design. resistance. The current rating is based on the t ≤ 10s thermal resistance B. The power dissipation PD is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper rating. dissipation limit for cases additional heatsinking is used. B: Repetitive rating, pulse where width limited by junction temperature. =175°C. C: The Repetitive pulse width limited by junctionfrom temperature C. R θJA israting, the sum of the thermal impedence junction toT J(MAX) lead R θJL and lead to ambient. the sum of theinthermal from case <300 R θJC and case toduty ambient. D. The The static RθJA ischaracteristics D. Figuresimpedence 1 to 6,12,14 arejunction obtainedtousing µs pulses, cycle 0.5% max. E. These The static Figures 1 to 6 are obtained <300 board µs pulses, duty Copper, cycle 0.5% with 2oz. in amax. still air environment with T A=25°C. The SOA E. testscharacteristics are performedinwith the device mounted on 1using in 2 FR-4 F. These curvesa are based onrating. the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming curve provides single pulse a maximum junction temperature T J(MAX) The SOA curve provides a single pulse rating. F. The maximum current rating is of limited by=175°C. bond-wires 2 G. These Rev5: Oct tests 2008are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. The maximum current rating is limited by bond-wires. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5600E N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 3 4.5V VDS=5V 2.5V 3.5V 1.5 2 2V ID(A) ID (A) 25°C 1 125°C 1.5V 1 0.5 VGS=1V 0 0 0 1 2 3 4 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 1.8 RDS(ON) (Ω ) 0.7 Normalized On-Resistance 0.8 VGS=1.8V 0.6 VGS=2.5V VGS=4.5V 0.5 0.4 VGS=4.5V ID=0.5A 1.6 1.4 VGS=1.8V ID=0.3A 1.2 VGS=2.5V ID=0.5A 1 0.8 0.6 0 0.2 0.4 0.6 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.2 1.0E+00 ID=0.5A 1.0E-01 125°C 1 125°C IS (A) RDS(ON) (Ω ) 1.0E-02 0.8 25°C 1.0E-03 1.0E-04 25°C 0.6 1.0E-05 1.0E-06 0.4 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO5600E N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 5 VDS=10V ID=0.5A Capacitance (pF) VGS (Volts) 4 3 2 40 Ciss 20 Coss 1 0 Crss 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 10.0 14 10µs TJ(Max)=150°C TA=25°C 12 10 RDS(ON) limited 1.0 100µs 1ms DC 0.1 0.1s TJ(Max)=150°C TA=25°C 0.0 0.01 0.1 1 VDS (Volts) Power (W) ID (Amps) 10µs 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=330°C/W 8 6 10ms 4 1s 10s 2 10 0 0.0001 100 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 20 VDS (Volts) Figure 8: Capacitance Characteristics In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5600E P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -1 TJ=55°C VDS=0V, VGS=±8V ±10 µA 1.1 VGS=-2.5V, ID=-0.5A 0.85 1 Ω VGS=-1.8V, ID=-0.3A 1.05 1.3 Ω VDS=-5V, ID=-0.51A 0.9 Diode Forward Voltage IS=-0.1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Turn-Off DelayTime A 0.9 VSD tD(off) -0.45 0.8 Forward Transconductance SWITCHING PARAMETERS tD(on) Turn-On DelayTime tr Turn-On Rise Time -0.6 0.65 TJ=125°C gFS Reverse Transfer Capacitance µΑ µA Static Drain-Source On-Resistance Crss 5 ±1 RDS(ON) Output Capacitance Units VDS=0V, VGS=±4.5V VGS=-4.5V, ID=-0.5A Coss Max V VDS=-20V, VGS=0V IDSS IS Typ -0.66 72 VGS=0V, VDS=-10V, f=1MHz VGS=-4.5V, VDS=-10V, RL=50Ω, RGEN=3Ω Ω S -1 V -0.5 A 100 pF 17 pF 9 pF 60.5 ns 150 ns 612 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-0.5A, dI/dt=100A/µs 27 Qrr Body Diode Reverse Recovery Charge IF=-0.5A, dI/dt=100A/µs 8.3 436 ns 35 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The maximum current rating is limited by bond-wires Rev5: Oct 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5600E P-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 5 -6V VDS=-5V -4.5V 4 25°C -4V 2 -3.5V 3 -ID(A) -ID (A) -10V -3V 2 125°C 1 -2.5V 1 VGS=-2.0V 0 0 0 1 2 3 4 5 0 1 1.4 3 4 5 Normalized On-Resistance 1.6 1.2 RDS(ON) (Ω ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics VGS=-1.8V 1 0.8 VGS=-2.5V 0.6 VGS=-4.5V 0.4 VGS=-1.8V 1.4 1.2 VGS=-2.5V VGS=-4.5V 1 0.8 0 0.2 0.4 0.6 0.8 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+00 1.3 ID=-0.5A 1.0E-01 125°C 1.0E-02 125°C 0.9 -IS (A) RDS(ON) (Ω ) 1.1 25°C 1.0E-03 0.7 1.0E-04 25°C 0.5 1.0E-05 0.3 1.0E-06 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.4 0.8 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO5600E P-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 5 VDS=-10V ID=-0.5A Ciss 80 Capacitance (pF) -VGS (Volts) 4 3 2 1 60 40 Coss 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics 14 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 12 10 1.00 Power (W) -ID (Amps) 10.00 100µs 0.10 RDS(ON) limited 1ms 10ms 1s 10s 1 10 0 0.0001 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=330°C/W 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) 10 6 2 0.01 0.1 8 4 0.1s DC Zθ JA Normalized Transient Thermal Resistance Crss 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5600E G ate C harge Test C ircuit & W aveform V gs Qg 10V + + V ds VD C - Q gs Q gd VD C - DUT V gs Ig C harge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg Vgs 10% Vgs td(on) tr td(off) ton tf t off Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com AO5600E Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com