AO4420A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4420A uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.This device is suitable for use as a synchronous switch in PWM applications. Standard Product AO4420A is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID = 13.7A (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 12mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current AF ID TA=70°C Pulsed Drain Current B B Avalanche Current Repetitive avalanche energy L=0.3mHB Power Dissipation TA=25°C TA=70°C EAR PD Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-AmbientA Maximum Junction-to-LeadC IDM IAR TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. RθJA RθJL Maximum 30 Units V V ±12 13.7 9.7 60 20 60 A A mJ 3.1 2 W -55 to 150 °C Typ 28 54 21 Max 40 75 30 Units °C/W °C/W °C/W www.aosmd.com AO4420A Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 VDS=24V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 RDS(ON) Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=13.7A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 0.004 1 30 1.1 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge VGS=4.5V, VDS=15V, ID=13.7A µA 100 nA 2 V A 8.3 10.5 12.5 15 9.7 12 37 0.76 3656 VGS=0V, VDS=15V, f=1MHz Units V 5 VGS=4.5V, ID=12.7A Coss Max TJ=55°C VGS=10V, ID=13.7A IS Typ mΩ mΩ S 1 V 5 A 4050 pF 256 pF 168 pF 0.86 1.1 Ω 30.5 36 nC Qgs Gate Source Charge Qgd Gate Drain Charge 8.6 tD(on) Turn-On DelayTime 5.5 9 ns tr Turn-On Rise Time 3.4 7 ns 49.8 75 ns 5.9 11 ns ns nC VGS=10V, VDS=15V, RL=1.1Ω, RGEN=3Ω 4.6 nC nC tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=13.7A, dI/dt=100A/µs 22.5 28 Qrr Body Diode Reverse Recovery Charge IF=13.7A, dI/dt=100A/µs 12.5 16 Body Diode Reverse Recovery Time A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t ≤ 10s thermal resistance rating. Rev 0 : Feb. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4420A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 30 10V 4.5V 50 20 ID(A) 40 ID(A) VGS=5V 25 VGS =2.5V 30 125°C 15 10 20 25°C VGS =2.0V 5 10 0 0 0.0 0 1 2 3 4 0.5 5 1.0 1.5 2.0 2.5 3.0 VGS(Volts) Figure 2: Transfer Characteristics VDS(Volts) Figure 1: On-Regions Characteristics 1.8 RDS(ON)(mΩ) 11 Normalize ON-Resistance 12 VGS =4.5V 10 9 8 VGS =10V 7 ID=13.7A 1.6 VGS=4.5V 1.4 VGS=10V 1.2 1.0 0.8 0 6 0 5 10 15 20 25 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1E+01 30 1E+00 ID=13.7A 25 125°C IS(A) RDS(ON)(mΩ) 1E-01 20 15 125°C 1E-02 1E-03 10 25°C 25°C 1E-04 5 1E-05 0 0 2 4 6 8 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4420A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 10000 VDS=15V ID=13.7A Ciss Capacitance (pF) VGS(Volts) 4 3 2 1000 Coss 1 Crss 100 0 0 10 20 30 0 40 100 ID(A) 0.1s 1s 1 1ms Power (W) 10ms 10s T J(Max) =150°C T A =25°C 1 ZθJA Normalized Transient Thermal Resistance 25 30 30 20 10 100 0 0.01 VDS(Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 10 DC 0.1 0.1 15 40 100µs 10 10 50 10µs RDS(ON) limited 5 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=40°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 T on T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (S) Figure 11: Normalized Maximum Transient Thermal Impedence Alpha & Omega Semiconductor, Ltd. www.aosmd.com