Data Sheet Schottky Barrier Diode RB168M-40 lApplications General rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 lFeatures 1)Small power mold type. (PMDU) 2)Low IR 3)High reliability PMDU lConstruction Silicon epitaxial lStructure 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 lTaping specifications (Unit : mm) lAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1)Mounted on epoxy board. 180°Half sine wave lElectrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. IR φ 1.0±0.1 4.0±0.1 1.81±0.1 Limits 40 40 1 30 150 3.71±0.1 8.0±0.2 1.5MAX Unit V V A A °C °C -55 to +150 Min. Typ. Max. - 0.60 0.65 V - 0.05 0.55 μA 1/3 0.25±0.05 1.75±0.1 φ 1.55±0.05 2.0±0.05 3.5±0.05 4.0±0.1 Unit Conditions IF=1.0A VR=40V 2011.06 - Rev.A Data Sheet RB168M-40 1000000 1 1000 Ta=125℃ Ta=150℃ f=1MHz 100000 Ta=125℃ 0.1 Ta=150℃ 0.01 Ta=25℃ 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(ｎA) FORWARD CURRENT:IF(A) Ta=75℃ Ta=75℃ 1000 100 Ta=25℃ 10 Ta=-25℃ 1 100 10 Ta=-25℃ 0.1 0.001 0 100 200 300 400 500 600 0 700 5 20 25 30 35 1 40 0 AVE:569.2mV 570 560 550 70 AVE:48.6nA 60 50 40 30 20 270 250 240 230 220 210 0 200 Ct DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) 30 8.3ms 150 100 50 AVE:84.0A 0 100 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 AVE:8.0ns 10 5 t 100 50 0 10 TIME:t(ms) IFSM-t CHARACTERISTICS 40 20 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1 Mounted on epoxy board 0.9 Rth(j-a) D=1/2 0.8 100 Rth(j-c) 10 1 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Ifsm 8.3ms 1cyc 1 1000 200 1 8.3ms 60 trr DISPERSION MAP IFSM DISPERSION MAP 0.1 Ifsm 80 0 0 150 AVE:244.4pF 260 IR DISPERSION MAP 1cyc Ifsm Ta=25℃ f=1MHz VR=0V n=10pcs 280 10 VF DISPERSION MAP 200 30 290 Ta=25℃ VR=40V n=30pcs 80 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 580 20 300 90 PEAK SURGE FORWARD CURRENT:IFSM(A) 590 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 Ta=25℃ VF=1A n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 600 PEAK SURGE FORWARD CURRENT:IFSM(A) 15 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) 10 Sin(θ＝180) 0.7 0.6 DC 0.5 0.4 0.3 0.2 0.1 0.1 0.001 0 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 100 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 2011.06 - Rev.A Data Sheet 3 0.01 0A Io 0V VR t AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 2.5 DC 0.005 D=1/2 Sin(θ＝180) 0 T 3 D=t/T VR=20V Tj=150℃ 2 DC 1.5 D=1/2 1 0.5 Sin(θ＝180) 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 VR t T D=t/T VR=20V Tj=150℃ 2 DC 1.5 D=1/2 1 0.5 Sin(θ＝180) 0 0 0 Io 0A 0V 2.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) RB168M-40 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) DERATING CURVE (Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) DERATING CURVE (Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 10 5 AVE:6.1kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A