Data Sheet 10V Drive Nch MOSFET RSJ450N04 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High current 3) High power Package 4.5 3.0 1.0 1.24 0.4 0.78 2.7 5.08 (1) (2) 1.2 2.54 (3) Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) RSJ450N04 Inner circuit Taping TL 1000 ○ ∗1 ∗2 (1) Gate (2) Drain (3) Source (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Symbol Limits Unit VDSS 40 20 V V Continuous VGSS ID 45 A Pulsed Continuous IDP IS *1 90 40 A A Pulsed ISP PD *1 90 50 A W Tch Tstg 150 55to150 C C Symbol Rth (ch-c) * Limits 2.5 Unit C / W Power dissipation Channel temperature Range of storage temperature *2 *1 Pw10s, Duty cycle1% *2 Tc=25C Thermal resistance Parameter Channel to Case * T c=25C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.09 - Rev.A Data Sheet RSJ450N04 Electrical characteristics (Ta = 25°C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Conditions VGS=20V, VDS=0V 40 - - V ID=1mA, V GS=0V IDSS - - 1 A VDS=40V, VGS=0V VGS (th) 1.2 - 3.0 V VDS=10V, ID=1mA RDS (on)* - 9.5 13.5 l Yfs l* 10 - - S ID=25A, VDS=10V m ID=25A, VGS=10V Input capacitance Ciss - 2400 - pF VDS=25V Output capacitance Coss - 380 - pF VGS=0V Reverse transfer capacitance Crss - 170 - pF f=1MHz Turn-on delay time td(on) * - 25 - ns ID=25A, VDD 25V tr * - 225 - ns VGS=10V td(off) * - 90 - ns RL=1.0 * - 390 - ns RG=10 Qg * - 43 - nC VDD 25V Gate-source charge Qgs * Gate-drain charge Qgd * - 12 6 - nC nC ID=45A, VGS=10V Rise time Turn-off delay time Fall time tf Total gate charge *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=25A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.09 - Rev.A Data Sheet RSJ450N04 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 20 20 18 18 16 VGS=4.5V VGS=4.0V 14 Drain Current : ID [A] 14 12 VGS=3.0V 10 8 6 4 12 10 8 VGS=2.8V 6 4 VGS=2.8V 2 Ta=25°C Pulsed 2 0 0 0 0.2 0.4 0.6 0.8 1 0 2 Drain-Source Voltage : VDS [V] 4 6 8 10 Drain-Source Voltage : VDS [V] Fig.4 Forward Transfer Admittance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 100 100 VGS=10V pulsed VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Forward Transfer Admittance Yfs [S] Static Drain-Source On-State Resistance RDS(on) [mW] VGS=3.2V VGS=4.0V VGS=3.0V VGS=10.0V 16 Drain Current : ID [A] VGS=10.0V Ta=25°C Pulsed 10 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 1 0.01 0.1 1 10 0.01 0.01 100 0.1 1 10 Drain Current : ID [A] Drain Current : ID [A] Fig.5 Typical Transfer Characteristics Fig.6 Source Current vs. Source-Drain Voltage 100 100 100 VGS=0V pulsed VDS=10V pulsed 10 1 Source Current : Is [A] Drain Currnt : ID [A] 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.01 0.001 1.0 1.5 2.0 2.5 3.0 3.5 0.0 4.0 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.5 1.0 1.5 Source-Drain Voltage : VSD [V] Gate-Source Voltage : VGS [V] 3/5 2011.09 - Rev.A Data Sheet RSJ450N04 Fig.7 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.8 Switching Characteristics 50 10000 VDD≒25V VGS=10V RG=10Ω Ta=25°C Pulsed 40 1000 Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=25°C Pulsed 30 ID=45.0A ID=22.5A 20 tf td(off) 100 td(on) 10 tr 10 1 0 0 2 4 6 8 10 12 14 16 18 0.01 20 0.1 Gate-Source Voltage : VGS [V] 10 100 Fig.10 Typical Capacitance vs. Drain-Source Voltage Fig.9 Dynamic Input Characteristics 100000 12 Ta=25°C VDD=25V ID=45A Pulsed 10 Ta=25°C f=1MHz VGS=0V 10000 Ciss 8 Capacitance : C [pF] Gate-Source Voltage : VGS [V] 1 Drain Current : ID [A] 6 4 1000 Coss 100 Crss 10 2 1 0 0 5 10 15 20 25 30 35 40 45 0.01 50 0.1 Fig.11 Maximum Safe Operating Area 10 100 Fig.12 Normalized Transient Thermal Resistance v.s. Pulse Width 1000 10 Operation in this area is limited by RDS(on) (VGS = 10V) Normalized Transient Thermal Resistance : r（t） Tc=25°C 100 Drain Current : ID [ A ] 1 Drain-Source Voltage : VDS [V] Total Gate Charge : Qg [nC] PW = 100μs 10 PW = 1ms 1 PW = 10ms 0.1 DC Operation 0.01 0.1 1 10 1 0.1 0.01 Rth(ch-c)=2.5°C/W Rth(ch-c)(t)=r(t)×Rth(ch-c) 0.001 0.0001 100 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) Drain-Source Voltage : VDS [ V ] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Tc=25°C Single Pulse 4/5 2011.09 - Rev.A Data Sheet RSJ450N04 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Fig.2-2 Gate Charge Waveform 5/5 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A