CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Power Management (Dual Transistor) CHUMF7PT Tr1:VOLTAGE 12 Volts CURRENT 0.5 Ampere DTr2:VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Power management circuit FEATURE * Small surface mounting type. (SC-88/SOT-363) * Power switching circuit in a single package. * Mounting cost and area can be cut in half. * Both the 2SC5585 & CHDTC123E in one package. * Built in bias resistor(R1=2.2kΩ, Typ. ) SC-88/SOT-363 (1) (6) 0.65 1.2~1.4 2.0~2.2 0.65 (4) 0.15~0.35 (3) 1.15~1.35 0.8~1.1 0.08~0.15 0~0.1 0.1 Min. CIRCUIT 6 4 R1 Tr1 2.15~2.45 R2 DTr2 1 3 SC-88/SOT-363 Dimensions in millimeters 2SC5585 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO Collector-base voltage − 15 V VCEO Collector-emitter voltage − 12 V VEBO Emitter-base voltage − 6 V − 500 NOTE.1 − 1000 NOTE.2 − 150 +150 IC DC Output current Icp PC Total power dissipation TSTG Storage temperature −55 TJ Junction temperature − Note 1. Single pulse Pw=1ms 2. 120mW per element must not be exceeded. Each terminal mounted on a recommended land. 150 mA mW O C O C CHDTC123E LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − 50 V VIN Input voltage -10 +20 V − 100 NOTE.1 − 100 NOTE.2 − 150 mW IO DC Output current IC(Max.) mA PC Power dissipation TSTG Storage temperature −55 +150 O C TJ Junction temperature − 150 O C Note 1. Characteristics of built-in transistor. 2. Each terminal mounter on a recommended land. 2SC5585 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL CONDITIONS MIN. BVCEO Collector-emitter breakdown voltage IC=1mA 12 − − V BVCBO Collector-base breakdown voltage IC=10uA 15 − − V IE=10uA 6 − − − − BVEBO ICBO IEBO hFE VCE(sat) PARAMETER Emitter-base breakdown voltage VCB=15V Collector cut-off current Cob Collector output capacitance fT Transition frequency MAX. UNIT V 100 nA nA − − 100 VCE=2V,IC=10mA 270 − 680 − IC=200mA,IB=10mA 90 250 mV VCB=10V,IE=0mA,f=1MHZ − − 7.5 − VCE=2V,IE=-10mA,f=100MHZ − 320 − pF MHz VEB=6V Emitter cut-off current DC current gain Collector-emitter saturation voltage TYP. Note 1.Pulse test: tp≤300uS; δ≤0.02. CHDTC123E CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO=100uA; VCC=5.0V 0.5 − − V VI(on) Input on voltage IO=20mA; VO=0.3V − − 3.0 V V VO(on) Output voltage IO=10mA; II=0.5mA − 0.1 0.3 II Input current VI=5V − − 3.8 mA IC(off) Output current VI=0V; VCC=50V − − 0.5 uA G1 DC current gain IO=20mA; VO=5.0V 20 − − − R1 Input resistor R2/R1 fT Resistor ratio Transition frequency Note Pulse test: tp≤300uS; δ≤0.02. IE=-5mA, VCE=10.0V f=100MHz = − 0.8 − 2.2 1.0 250 − 1.2 − KΩ − MHz RATING CHARACTERISTIC CURVES ( CHUMF7PT ) 2SC5585 Typical Electrical Characteristics Fig.2 DC current gain vs. collector current Fig.1 Ground emitter propagation characteristics 1000 VCE=2V pulsed O DC CURRENT GAIN : hFE 25 C 100 Ta=25 C O O O Ta=-40 C 10 1 O -40 C 100 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1 1.4 1000 O Ta=25 C pulsed 100 O Ta=125 C O Ta=25 C 10 O Ta=-40 C 1 1 10 100 COLLECTOR CURRENT : IC (mA) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) Fig.3 Collector-emitter saturation voltage vs. collector current ( I ) 10 100 1000 COLLECTOR CURRENT : IC(mA) BASE TO EMITTER VOLTAGE : VBE(V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) VCE=2V pulsed Ta=125 C O Ta=125 C COLLECTOR CURRENT : IC(mA) 1000 Fig.4 Collector-emitter saturation voltage vs. collector current ( II ) 1000 IC/IB=20 pulsed 100 O Ta=125O C Ta=25 C O Ta=-40 C 10 1 1 10 100 COLLECTOR CURRENT : IC (mA) 1000 RATING CHARACTERISTIC CURVES ( CHUMF7PT ) 2SC5585 Typical Electrical Characteristics 1000 1000 IC/IB=20 pulsed Ta=-40OOC Ta=25 C O Ta=125 C 100 10 1 1 10 100 1000 EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR CURRENT : IC(mA) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 1000 Fig.6 Gain bandwidth product vs. collector current TRANSITION FREQUENCY : fT(MHZ) BASER SATURATION VOLTAGE : VBE(sat)(mV) Fig.5 Base-emitter saturation voltage vs. collector current IE=0A f=1MHOZ Ta=25 C 100 Cib 10 Cob 1 1 10 100 1000 COLLECTOR TO BASE VOLTAGE : VCB(V) VCE=2V O Ta=25 C pulsed 100 10 1 1 10 100 EMITTER CURRENT : IE(mA) 1000 RATING CHARACTERISTIC CURVES ( CHUMF7PT ) CHDTC123E Typical Electrical Characteristics INPUT VOLTAGE : VI(on) (V) 100 VO=0.3V 50 20 10 Ta=−40°C 25°C 100°C 5 2 1 500m Fig.2 Output current vs. input voltage (OFF characteristics) OUTPUT CURRENT : Io (A) Fig.1 Input voltage vs. output current (ON characteristics) 10m 5m VCC=5V 2m 1m 500µ Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 2µ 1µ 0 50m 100m OUTPUT CURRENT : IO (A) VO=5V 200 Ta=100°C 25°C −40°C 100 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m OUTPUT CURRENT : IO (A) 50m 100m 1.5 2.0 3.0 2.5 Fig.4 Output voltage vs. output current 1 OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : G 1k 1.0 INPUT VOLTAGE : VI(off) (V) Fig.3 DC current gain vs. output current 500 0.5 lO/lI=20 500m 200m 100m 50m Ta=100°C 25°C −40°C 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A)