Data Sheet Schottky Barrier Diode RBQ10B65A Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 2.3±0.2 0.1 6.5±0.2 0.65±0.1 （2） （3） 2.0 3.0 CPD 0.5±0.1 1.0±0.2 2.3±0.2 2.3±0.2 Construction Silicon epitaxial planer 1.6 2.5 0.75 0.9 0.8 min 3)High reliability （1） 1.6 9.5±0.5 1.5±0.3 5.1±0.2 0.1 5.5±0.3 0.1 Features 1)Power mold type. (CPD) 2)Low IR 6.0 0.5±0.1 C0.5 2.3 2.3 Structure ROHM : CPD JEITA : SC-63 Manufacture Date Taping specifications (Unit : mm) Absolute maximum ratings（Tc=25°C） Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak （60Hz・1cyc）（*2） Junction temperature Tj Storage temperature Tstg (*1) Business frequencies, 1/2 Io per diode. (*2) Per diode. Electrical characteristics（Tj=25°C） Parameter Symbol VF Forward voltage Reverse current www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. IR Limits 65 65 10 50 150 Unit V V A A °C °C −40 to +150 Min. Typ. Max. - - 0.69 V - - 0.15 mA 1/4 Unit Conditions IF=5A VR=65V 2012.01 - Rev.A Data Sheet RBQ10B65A 100000 10 Ta=150°C 10000 REVERSE CURRENT:IR(µA) FORWARD CURRENT:IF(A) Ta=125°C 1 Ta=150°C Ta=75°C 0.1 Ta=25°C 1000 Ta=125°C 100 Ta=75°C 10 1 Ta=25°C 0.1 Ta=−25°C Ta=−25°C 0.01 0.01 0 100 200 300 400 500 600 700 0 800 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 700 690 f=1MHz 100 10 Ta=25°C IF=5A n=30pcs 680 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 670 660 650 640 AVE:629.1mV 630 620 610 600 1 0 5 10 15 20 25 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 450 Ta=25°C VR=65V n=30pcs 40 30 20 AVE:12.57µA 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 50 REVERSE CURRENT:IR(µA) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 Ta=25°C f=1MHz VR=0V n=10pcs 440 430 420 410 AVE:396pF 400 390 380 370 360 350 0 Ct DISPERSION MAP IR DISPERSION MAP www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/4 2012.01 - Rev.A 300 30 REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 250 PEAK SURGE FORWARD CURRENT:IFSM(A) Data Sheet RBQ10B65A 8.3ms 200 150 AVE:130A 100 50 0 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 AVE:7.5ns 10 5 0 trr DISPERSION MAP IFSM DISPERSION MAP 300 300 Ifsm 250 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 1cyc 200 150 100 50 Ifsm 150 100 50 0 0 1 10 100 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 15 FORWARD POWER DISSIPATION:Pf(W) 100 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) t 200 Rth(j-a) 10 Rth(j-c) 1 10 D=1/2 Sin(θ＝180) 5 DC 0.1 0.001 0 0.01 0.1 1 10 100 0 1000 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5 10 15 20 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 3/4 2012.01 - Rev.A Data Sheet RBQ10B65A 25 2 0A AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 1.5 DC 1 D=1/2 Sin(θ＝180) 0.5 Io 0V 20 VR t T 15 D=1/2 D=t/T VR=30V Tj=150°C DC 10 5 Sin(θ＝180) 0 0 0 10 20 30 40 50 60 70 0 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 30 25 Io 20 t DC T VR D=t/T VR=30V Tj=150°C 15 D=1/2 10 5 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 25 20 15 10 5 Sin(θ＝180) AVE:12.3kV AVE:2.9kV 0 0 0 25 50 75 100 125 150 C=200pF R=0Ω CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. C=100pF R=1.5kΩ ESD DISPERSION MAP 4/4 2012.01 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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