ROHM RSX301LA-30

Schottky barrier diode
RSX301LA-30
Applications
General rectification
 Land size figure (Unit : mm)
Dimensions (Unit : mm)
1.4
3) High reliability.
6
Features
1) Small and Thin power mold type.
(PMDT)
2) Low IR & Low VF
4.4
1.4
2.0
PMDＴ
Construction
Silicon epitaxial planer
Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current saurge peak (60Hz / 1cyc）
Junction temperature
Storage temperature
Limits
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Unit
V
V
A
A
C
C
30
30
3
70
150
-40 to +150
(*1)Tc=90C max Mounted on epoxy board. 180Half sine wave
Electrical characteristics (Ta=25C)
Parameter
Forward voltage
Reverse current
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Symbol
VF
IR1
Min.
-
Typ.
-
Max.
0.42
90
Unit
V
μA
IR2
-
-
200
μA
1/3
Conditions
IF=3.0A
VR=15V
VR=30V
2010.04 - Rev.E
RSX301LA-30
Data Sheet
Electrical characteristics curves
1000000
Ta=150℃
1 Ta=150℃
Ta=25℃
Ta=-25℃
0.1
0.01
10000
Ta=75℃
1000
Ta=25℃
100
10
0.001
Ta=-25℃
200
300
400
500
600
0
15
20
25
0
30
380
370
360
AVE:379.8mV
800
600
500
400
300
AVE:86.89uA
100
50
0
25
20
15
10
AVE:11.8ns
5
0
AVE:800.8p
780
770
Ifsm
250
8.3m 8.3m
1cyc
200
150
100
50
0
150
100
50
0
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
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10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
3
Mounted on epoxy board
Rth(j-a)
100
Rth(j-c)
10
IF=1A
IM=100mA
1
1ms
0.1
0.001
time
300us
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
1000
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
t
200
10
790
1
1000
1
800
trr DISPERSION MAP
300
Ifsm
810
300
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
IFSM DISRESION MAP
250
820
Ct DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
AVE:178.0
RESERVE RECOVERY TIME:trr(ns)
100
30
Ta=25℃
f=1MHz
VR=0V
n=10pcs
830
IR DISPERSION MAP
8.3ms
25
750
30
150
20
760
VF DISPERSION MAP
1cyc
15
840
0
200
10
850
700
200
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Ta=25℃
VR=30V
n=30pcs
900
350
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10
1000
Ta=25℃
IF=3A
n=30pcs
REVERSE CURRENT:IR(uA)
FORWARD VOLTAGE:VF(mV)
400
Ifsm
100
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
390
5
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
100
f=1MH
10
1
0
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1000
Ta=125℃
100000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=75℃
Ta=125℃
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
10
2
DC
D=1/2
Sin(=180)
1
0
0
1
2
3
4
5
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2010.04 - Rev.E
7
5
0A
0V
REVERSE POWER
DISSIPATION:PR (W)
3
DC
D=1/2
2
1
Sin(θ=180)
0
0
10
20
30
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
6
4
Data Sheet
5
t
T
VR
D=t/T
VR=15V
Tj=150℃
DC
4
Sin(θ=180)
3
2
1
D=1/2
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve"(Io-Ta)
150
0A
7
Io
0V
6
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
RSX301LA-30
DC
5
4
Io
t
T
VR
D=t/T
VR=15V
Tj=150℃
D=1/2
3
Sin(θ=180)
2
1
0
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
30
25
No break at 30kV
No break at 30kV
20
15
10
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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©2010 ROHM Co., Ltd. All rights reserved.
3/3
2010.04 - Rev.E
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R1010A