Schottky Barrier Diode RB080L-30 Dimensions (Unit : mm) Applications General rectification Land size figure (Unit : mm) 2.0 ① 4.2 0.1±0.02 0.1 ② 5.0±0.3 1 1.2±0.3 2 4.5±0.2 Features 1)Small power mold type. (PMDS) 2)High reliability 3)Low VF 2.0 2.6±0.2 PMDS 2.0±0.2 1.5±0.2 Structure Silicon epitaxial planer Structure ROHM : PMDS JEDEC : SOD-106 ① ② year week factory Taping dimensions (Unit : mm) 2.0±0.05 4.0±0.1 0.3 12±0.2 5.5±0.05 9.5±0.1 5.3 +0.1 -0.0 1.75±0.1 φ1.55±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit VRM Reverse voltage (repetitive) 30 V VR Reverse voltage (DC) 30 V Average rectified forward current (*1) 5 Io A IFSM Forward current surge peak (60Hz・1cyc) 70 A Junction temperature 150 Tj C Storage temperature C 40 to 150 Tstg (*1)Alumina substrate at the time of assemble 180° Half Sine Wave, Tc=100°C MAX. Electrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. IR Min. Typ. Max. - - 0.51 V - - 150 μA 1/4 Unit Conditions IF=5.0A VR=30V 2011.12 - Rev.B Data Sheet RB080L-30 100000 10 Tj=150°C REVERSE CURRENT:IR(A) FORWARD CURRENT:IF(A) Tj=150°C 1 Tj=125°C 0.1 Tj=25°C 0.01 10000 Tj=125°C 1000 Tj=75°C 100 Tj=25°C 10 Tj=75°C 1 0.001 0 100 200 300 400 500 0 600 10000 20 30 480 f=MHz IF=5.0A 475 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1000 100 470 465 460 455 450 AVE:443.4mV 445 440 435 10 430 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP 30 1250 VR=30V f=1MHz VR=0V 1230 20 15 AVE:22.2A 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(A) 25 1210 1190 1170 1150 1130 AVE:1156pF 1110 5 1090 1070 0 IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Ct DISPERSION MAP 2/4 2011.12 - Rev.B 30 330 280 REVERSE RECOVERY TIME:trr(ns) IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) Data Sheet RB080L-30 8.3ms 8.3ms 1cyc 230 AVE：225A 180 130 IF=0.5A IR=1A Irr=0.25*IR 25 20 15 AVE:18.9ns 10 5 0 80 trr DISPERSION MAP IFSM DISPERSION MAP 350 230 300 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 8.3ms 8.3ms 1cyc. 220 210 IFSM time 250 200 150 100 50 0 200 1 10 1 100 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1000 5 On glass-epoxy substrate D.C. 4 Rth(j-a) 100 Rth(j-c) 10 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) D=1/2 Sin(θ＝180) 3 2 1 1 0.01 0 0.1 1 10 100 1000 0 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2 4 6 8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 10 2011.12 - Rev.B 1 10 0.9 9 0.8 8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) Data Sheet RB080L-30 0.7 0.6 D.C. 0.5 0.4 0.3 D=1/2 0.2 0A 0V D.C. 7 Io VR t T 6 D=t/T VR=15V Tj=150°C D=1/2 5 Sin(θ＝180) 4 3 2 1 0.1 Sin(θ＝180) 0 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 AVE:13.2kV 5 0 C=200pF R=0Ω C=150pF R=330Ω ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.12 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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