Data Sheet Schottky Barrier Diode RB088B150 lExternal Dimensions(Unit : mm) 0.5±0.1 6.0 5.1±0.2 0.1 5.5±0. 1.5±0.3 3 0.75 0.9 (1) lConstruction Silicon epitaxial (2) 0.65±0.1 (3) CPD 0.5±0.1 2.3±0.2 2.3±0.2 1.0±0.2 ROHM : CPD JEITA : SC-63 1 1.6 9.5±0.5 1.6 1 2.5 lFeatures 1)Cathode common dual type 2)Low IR 3)High reliability 4)AEC-Q101 qualified 6.0 3.0 2.0 C0.5 lLand Size Figure(Unit : mm) 2.3±0.2 0.1 6.5±0.2 0.8 min lApplications Switching power supply 2.3 2.3 lStructure Manufacture lTaping Dimensions(Unit : mm) 2.0±0.05 φ 1.55±0.1 0 8.0±0.1 0.4±0.1 φ 3.0±0.1 8.0±0.1 10.1±0.1 10.1±0.1 0～0.5 6.8±0.1 13.5±0.2 TL 16.0±0.2 7.5±0.05 2.5±0.1 4.0±0.1 2.7±0.2 lAbsolute Maximum Ratings(Ta=25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive) VRM 150 V Reverse voltage (DC) VR 150 V Average rectified forward current (*1) Io 10 A IFSM 50 A Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C Forward current surge peak (60Hz・1cyc)(*2) (*1) 1/2 Io per Diode. Mounting on epoxi board. 180°Half sine wave (*2) Per Diode. lElectrical Characteristics(Ta=25°C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage VF - 0.78 0.88 V IF=5.0A Reverse current IR - - 15 mA VR=150V www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/4 2012.08 - Rev.A Data Sheet RB088B150 10000 10 Ta = 150°C Ta = 150°C REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) 1000 1 Ta = 125°C Ta = 75°C 0.1 Ta = 25°C 100 200 300 400 500 600 700 800 Ta = 125°C 10 1 Ta = 75°C 0.1 Ta = 25°C 0.01 0.001 Ta = -25°C 0.01 100 Ta = -25°C 0.0001 900 0 50 100 1000 790 f = 1MHz Ta=25°C VF=5A n=30pcs FORWARD VOLTAGE:VF(mV) 785 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 150 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 100 780 775 AVE : 767.3mV 770 765 10 0 5 10 15 20 25 760 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP 460 375 REVERSE CURRENT:IR(nA) 350 325 300 Ta=25°C VR=150V n=30pcs Ta=25°C f=1MHz VR=0V n=10pcs 455 CAPACITANCE BETWEEN TERMINALS:Ct(pF) AVE : 327.3nA 275 450 445 AVE : 439.5pF 440 435 430 250 Ct DISPERSION MAP IR DISPERSION MAP www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/4 2012.08 - Rev.A 250 IFSM RESERVE RECOVERY TIME:trr(ns) 30 225 PEAK SURGE FORWARD CURRENT:IFSM(A) Data Sheet RB088B150 8.3ms 1cyc. 200 AVE : 153.5A 175 150 125 100 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 AVE : 10.7ns 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP 1000 1000 IFSM 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 1cyc. 100 10 1 10 100 10 100 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 TIME:t(ms) IFSM-t CHARACTERISTICS 100 6 Rth(j-a) 10 Rth(j-c) Mounted on epoxy board IM=10mA 1 IF=5A 5 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (°C/W) time time 4 D = 1/2 3 Sin(θ＝180) DC 2 1 1ms 300ms 0.1 0.001 0.01 0.1 1 10 100 0 1000 1 2 3 4 5 6 7 8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 0 3/4 2012.08 - Rev.A Data Sheet RB088B150 0.25 10 0.2 8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) DC 0.15 DC 0.1 D = 1/2 Sin(θ = 180) 0.05 0 0 D = 1/2 100 D=t/T VR=75V Tj=150°C Sin(θ = 180) 4 0 150 0A Io 0V VR t T DC 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) D=t/T VR=75V Tj=150°C D = 1/2 5 Sin(θ = 180) 3 AVE : 2.21kV 2.5 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t T 6 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 10 Io VR 2 50 15 0A 0V 2 1.5 1 AVE : 0.47kV 0.5 0 0 25 50 75 100 125 0 150 CASE TEMPARATURE:Tc(°C) DERATING CURVE(Io-Tc) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 4/4 2012.08 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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