RB558VA150 Data Sheet Schottky Barrier Diode RB558VA150 lApplications General rectification lExternal Dimensions(Unit : mm) lLand Size Figure(Unit : mm) 0.17±0.1 0.05 1.1 2.5±0.2 1.9±0.1 lFeatures 1)Small power mold type.(TUMD2) 2)High reliability 3)AEC-Q101 qualified 0.8 0.5 2.0 1.3±0.05 TUMD2 lConstruction Silicon epitaxial lStructure 0.8±0.05 0.6±0.2 0.1 ROHM : TUMD2 Manufacture Date lTaping Dimensions(Unit : mm) 0.25±0.05 2.75 2.8±0.05 8.0±0.2 3.5±0.05 1.75±0.1 φ 1.55±0.1 0 2.0±0.05 4.0±0.1 φ 1.0±0.2 0 4.0±0.1 1.43±0.05 0.9±0.08 lAbsolute Maximum Ratings(Ta=25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive) VRM 150 V Reverse voltage (DC) VR 150 V Average rectified forward current (*1) Io 0.5 A IFSM 3 A Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C Forward current surge peak (60Hz・1cyc) (*1)Mounting on epoxi board. 180°Half sine wave lElectrical Characteristics(Ta=25°C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage VF - - 0.95 V IF=0.5A Reverse current IR - - 0.5 mA VR=150V www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/4 2012.08 - Rev.A Data Sheet RB558VA150 100000 1 Ta = 150°C 0.1 10000 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) Ta = 150°C Ta = 125°C Ta = 75°C Ta = 25°C 0.01 1000 Ta = 125°C Ta = 75°C 100 Ta = 25°C 10 Ta = -25°C 1 Ta = -25°C 0.001 0.1 200 400 600 800 1000 0 50 100 830 100 f = 1MHz Ta=25°C VF=0.5A n=30pcs FORWARD VOLTAGE:VF(mV) 825 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 150 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 10 820 815 AVE : 805.1mV 810 805 1 800 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP 50 30 Ta=25°C VR=150V n=30pcs AVE : 15.2nA 20 15 10 40 35 30 5 25 0 20 AVE : 24.0pF Ct DISPERSION MAP IR DISPERSION MAP www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Ta=25°C f=1MHz VR=0V n=10pcs 45 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 25 2/4 2012.08 - Rev.A 30 30 25 25 IFSM RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) Data Sheet RB558VA150 8.3ms 1cyc. 20 AVE : 13.0A 15 10 5 0 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 20 AVE : 10.2ns 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP 100 100 IFSM 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 1cyc. 10 1 time 10 1 1 10 100 1 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 0.6 1000 IM=10mA IF=0.5A 0.5 D = 1/2 time 1ms 300ms Rth(j-a) 100 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (°C/W) Mounted on epoxy board 0.4 Sin(θ＝180) 0.3 DC 0.2 0.1 10 0.001 0 0.01 0.1 1 10 100 1000 0 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 0.5 1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 3/4 2012.08 - Rev.A Data Sheet RB558VA150 1.5 0.0025 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.0020 0.0015 DC D = 1/2 0.0010 Sin(θ = 180) 0A Io 0V VR t 1 DC T D=t/T VR=75V Tj=150°C D = 1/2 0.5 Sin(θ = 180) 0.0005 0 0.0000 0 50 100 0 150 1.5 0V VR D=t/T VR=75V Tj=150°C D = 1/2 0.5 Sin(θ = 180) ELECTROSTATIC DISCHARGE TEST ESD(KV) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 100 125 150 2.5 t T 75 3 Io 0A DC 50 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 1 25 2 AVE : 1.18kV 1.5 1 AVE : 0.39kV 0.5 0 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(°C) DERATING CURVE(Io-Tc) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 4/4 2012.08 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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