RB228T100FH : Diodes

Data Sheet
AEC-Q101 Qualified
Schottky Barrier Diode
RB228T100
RB228T100FH
lDimensions (Unit : mm)
lApplications
Switching power supply
lStructure
4.5±0.3
0.1
2.8±0.2
0.1
8.0±0.2
12.0±0.2
lFeatures
1)Cathode common type.
2)Low IR
3)High reliability
4)AEC-Q101 qualified
5.0±0.2
①
㻌
lConstruction
Silicon epitaxial planer
15.0±0.4
0.2
㻤㻚㻜
10.0±0.3
0.1
㻝㻟㻚㻡㻹㻵㻺
㻝㻚㻞
㻝㻚㻟
㻜㻚㻤
㻔㻝㻕 㻔㻞㻕 㻔㻟㻕
0.7±0.1
㻌㻌㻌㻌㻌㻌㻌㻜㻚㻜㻡
2.6±0.5
ROHM : ＴO220FN
①㻌
Manufacture Date
lAbsolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
VRM
Reverse voltage (repetitive)
110
VR
Reverse voltage (DC)
100
Average rectified forward current (*1)
30
Io
IFSM
Forward current surge peak (60Hz・1cyc) (*2)
100
Junction temperature
150
Tj
Storage temperature
-40 to +150
Tstg
(*1) Business frequence sin wave, Tc=83°C max. Rating of per diode : lo/2
(*2) per diode
lElectrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
Thermal impedance
Unit
V
V
A
A
C
C
Min.
Typ.
Max.
Unit
-
-
0.87
V
IR
-
-
θjc
-
-
0.15
2.00
°C/W
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1/4
mA
Conditions
IF=5A
VR=100V
junction to case
2012.08 - Rev.B
RB228T100FH
1000000
100
Ta=75°C
Ta=125°C
1
Ta=150°C
0.1
Ta=25°C
0.01
0.001
100
200
300
400
500
600
700
10000
Ta=75°C
1000
Ta=25°C
100
Ta=-25°C
10
Ta=-25°C
800
1
900
Ta=125°C
Ta=150°C
100000
REVERSE CURRENT:IR(nA)
10
FORWARD CURRENT:IF(A)
Data Sheet
0
10
20
30
40
50
60
70
1000
90 100 110
770
FORWARD VOLTAGE:VF(mV)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
80
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
100
Ta=25°C
IF=5A
n=30pcs
760
750
740
AVE:731.5mV
730
10
0
10
20
720
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
600
Ta=25°C
VR=100V
n=30pcs
300
200
AVE:151nA
100
590
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
400
Ta=25°C
f=1MHz
VR=0V
n=10pcs
580
570
560
550
540
530
AVE:514.4pF
520
510
500
0
IR DISPERSION MAP
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© 2012 ROHM Co., Ltd. All rights reserved.
Ct DISPERSION MAP
2/4
2012.08 - Rev.B
RB228T100FH
Data Sheet
30
400
PEAK SURGE
FORWARD CURRENT:IFSM(A)
350
REVERSE RECOVERY TIME:trr(ns)
1cyc
IFSM
8.3ms
300
AVE:231A
250
200
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
AVE:8.2ns
10
5
0
IFSM DISPERSION MAP
trr DISPERSION MAP
400
300
IFSM
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
250
8.3ms
1cyc
200
150
100
1
10
200
100
0
100
t
300
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
60
100
50
D=1/2
10
Rth(j-a)
Rth(j-c)
1
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Mounted on epoxy board
40
30
Sin(θ＝180)
20
DC
10
0.1
0.001
0.01
0.1
1
10
100
0
1000
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2012 ROHM Co., Ltd. All rights reserved.
3/4
0
10
20
30
40
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
50
2012.08 - Rev.B
RB228T100FH
Data Sheet
0.02
80
REVERSE POWER
DISSIPATION:PR (W)
0.015
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
70
DC
0.01
D=1/2
0.005
Sin(θ＝180)
0
10
20
30
40
50
60
70
80
90
D=1/2
D=t/T
VR=50V
Tj=150°C
DC
30
20
Sin(θ＝180)
0
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
80
30
Io
0A
0V
60
T
DC
50
40
VR
t
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
70
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
t
T
40
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
D=t/T
VR=50V
Tj=150°C
D=1/2
30
20
Sin(θ＝180)
0
25
50
25
20
AVE:10.9kV
15
10
AVE:3.9kV
5
10
0
VR
50
0
100
Io
0V
60
10
0
0A
75
100
125
0
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
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© 2012 ROHM Co., Ltd. All rights reserved.
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
4/4
2012.08 - Rev.B
Notice
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© 2012 ROHM Co., Ltd. All rights reserved.
R1120A