Schottky Barrier Diode RB085B-30 zApplications General rectification zDimensions(Unit : mm) zLand size figure(Unit : mm) 6.0 1.6 1.6 zFeatures 1)Power mold type.(CPD) 2)Low VF 3.0 2.0 6.0 3)High reliability CPD zConstruction Silicon epitaxial planar 2.3 2.3 zStructure (2) (1) (3) zTaping specifications(Unit : mm) zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz / 1cyc)(*1) Junction temperature Storage temperature Limits Symbol VRM VR Io IFSM Tj Tstg Unit V V A A 35 30 10 35 150 -40 to +150 °C °C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=105°C zElectrical characteristics(Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. Symbol VF IR Min. - Typ. - Max. 0.48 θjc - - 300 µA - - 6.0 °C/W 1/3 Unit V Conditions IF=4.0A VR=30V junction to case 2009.11 - Rev.E RB085B-30 Data Sheet zElectrical characteristics curves 10 10000 Ta=125°C f=1MHz REVERSE CURRENT:IR(uA) Ta=125°C Ta=25°C 1 Ta=75°C Ta=-25°C 0.1 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100000 Ta=150°C FORWARD CURRENT : IF(A) Ta=150°C 1000000 Ta=75°C 1000 Ta=25°C 100 10 Ta=-25・C 1 1000 100 0.1 0.01 10 0.01 0 100 200 300 400 500 600 700 0 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 10 15 20 25 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 0 30 440 430 420 AVE:429.3mV 140 120 100 AVE:41.0uA 80 60 40 VF DISPERSION MAP 1750 1700 8.3ms AVE:63.0A 100 50 1600 1000 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 AVE:19.3ns 15 10 5 0 0 AVE:1617.3pF 1650 Ct DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm 150 1800 IR DISPERSION MAP 30 200 1850 1500 0 250 Ta=25°C f=1MHz VR=0V n=10pcs 1900 1550 20 300 Ifsm 8.3ms 100 10 1 IFSM DISPERSION MAP 5 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 100 1ms time Rth(j-a) 4 300us 10 Rth(j-c) 1 0.1 0.001 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (・C/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 100 IF=5A 100 t 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Mounted on a epoxy board IM=100mA Ifsm 8.3ms 1cyc trr DISPERSION MAP 1000 30 1950 Ta=25°C VR=30V n=30pcs 160 410 20 2000 180 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 450 10 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 200 Ta=25°C IF=4A n=30pcs REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 460 5 D=1/2 DC 3 Sin(θ=180) 2 1 0.01 0.1 1 10 TIME : t(s) Rth-t CHARACTERISTICS 2/3 100 1000 0 0 5 10 15 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 2009.11 - Rev.E RB085B-30 Data Sheet 20 20 Io 0A REVERSE POWER DISSIPATION:PR (W) 6 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Sin(θ=180) 8 D=1/2 4 DC 2 0 0V 15 VR t T DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 10 D=t/T VR=15V Tj=150°C 10 D=1/2 5 Sin(θ=180) 10 20 30 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 0A Io 0V VR t T DC D=t/T VR=15V Tj=150°C 10 D=1/2 5 Sin(θ=180) 0 0 0 15 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(°C) Derating Curve"(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(°C) Derating Curve"(Io-Tc) 30 No break at 30kV No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.11 - Rev.E Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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